公开(公告)号：US20190355799A1

公开(公告)日：2019-11-21

申请号：US16412059

申请日：2019-05-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SEOKJE SEONG ,  SEMYUNG KWON ,  YOON HO KIM ,  BYUNGJU LEE

IPC: H01L27/32 ,  H01L51/00

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.