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公开(公告)号:US11950455B2
公开(公告)日:2024-04-02
申请号:US17287936
申请日:2019-02-20
Applicant: Samsung Display Co., Ltd.
Inventor: Yeonkeon Moon , Joonseok Park , Kwang-suk Kim , Myounghwa Kim , Taesang Kim , Geunchul Park , Kyungjin Jeon
IPC: H01L29/786 , H01L27/12 , H10K59/121 , H10K59/131
CPC classification number: H10K59/1213 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/131
Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.
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公开(公告)号:US11678547B2
公开(公告)日:2023-06-13
申请号:US17328026
申请日:2021-05-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
CPC classification number: H01L27/3279 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1288 , H01L28/60 , H01L2227/323
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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公开(公告)号:US11677030B2
公开(公告)日:2023-06-13
申请号:US17158824
申请日:2021-01-26
Applicant: Samsung Display Co., Ltd.
Inventor: Sangwoo Sohn , Yeonkeon Moon , Myounghwa Kim , Taesang Kim , Geunchul Park , Joonseok Park , Junhyung Lim , Hyelim Choi
IPC: H01L29/786 , H01L27/32 , H01L29/24 , H01L27/12 , H01L21/8234
CPC classification number: H01L29/7869 , H01L21/823412 , H01L27/1222 , H01L27/1225 , H01L27/3244 , H01L29/24 , H01L29/78696 , H01L27/3262
Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.
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公开(公告)号:US11309429B2
公开(公告)日:2022-04-19
申请号:US16819496
申请日:2020-03-16
Applicant: Samsung Display Co., Ltd.
Inventor: Joonseok Park , Jihun Lim , Myounghwa Kim , Taesang Kim , Yeonkeon Moon
IPC: H01L29/786 , H01L29/24 , H01L23/532 , H01L27/32 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423
Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.
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公开(公告)号:US20220149132A1
公开(公告)日:2022-05-12
申请号:US17246989
申请日:2021-05-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Yeonkeon Moon , Taesang Kim , Joonseok Park , Sangwoo Sohn , Soyoung Koo
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.
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公开(公告)号:US20210280667A1
公开(公告)日:2021-09-09
申请号:US17328026
申请日:2021-05-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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公开(公告)号:US10367012B2
公开(公告)日:2019-07-30
申请号:US15657508
申请日:2017-07-24
Applicant: Samsung Display Co., Ltd.
Inventor: Jihun Lim , Jaybum Kim , Joonseok Park , Kyoungseok Son , Junhyung Lim
IPC: H01L29/49 , H01L29/788 , H01L29/786 , H01L27/12 , H01L27/32 , G02F1/1362 , G02F1/1368 , H01L29/66
Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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公开(公告)号:US11723244B2
公开(公告)日:2023-08-08
申请号:US17152249
申请日:2021-01-19
Applicant: Samsung Display Co., Ltd.
Inventor: Hyelim Choi , Joonseok Park , Myounghwa Kim , Taesang Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim
IPC: H10K59/131 , H10K59/122 , H10K59/12
CPC classification number: H10K59/131 , H10K59/122 , H10K59/1201
Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.
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公开(公告)号:US11696470B2
公开(公告)日:2023-07-04
申请号:US17246989
申请日:2021-05-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Yeonkeon Moon , Taesang Kim , Joonseok Park , Sangwoo Sohn , Soyoung Koo
CPC classification number: H10K59/1213 , H10K71/00 , H01L27/1225 , H01L27/1251 , H10K59/1201 , H10K59/38
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.
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公开(公告)号:US20220037456A1
公开(公告)日:2022-02-03
申请号:US17368721
申请日:2021-07-06
Applicant: Samsung Display Co., Ltd.
Inventor: Geunchul Park , Joonseok Park , Myounghwa Kim , Taesang Kim , Yeonkeon Moon , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.
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