Abstract:
A display device includes: first pixels in a first pixel region and being connected to first scan lines; second pixels in a second pixel region that is located at a side of the first pixel region and has a width smaller than a width of the first pixel region and being connected to second scan lines; third pixels in a third pixel region that is spaced apart from the second pixel region and has a width smaller than the width of the first pixel region and being connected to third scan lines; a load matching unit in a peripheral region at an outside of the second pixel region and the third pixel region and configured to match loads of the second scan lines and the third scan lines to that of the first scan lines; and a protection unit in the peripheral region and being connected between the second and third pixels and the load matching unit.
Abstract:
Disclosed is a thin film transistor array panel including: a substrate including a display area and a peripheral area; a second semiconductor layer disposed on the substrate, and disposed on a first semiconductor layer disposed in the display area and the peripheral area; and a passivation layer disposed on the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer include an oxide semiconductor, and a thickness of the first semiconductor layer is different from that of the second semiconductor layer.
Abstract:
A thin film transistor array panel includes: a gate conductor disposed on a substrate and including a gate line and a gate electrode, a semiconductor layer overlapping the gate electrode and including an oxide semiconductor, a data conductor including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a sidewall covering side surface parts of the drain electrode and the source electrode adjacent to a channel region of the semiconductor layer, and a passivation layer covering the source electrode, the drain electrode, and the sidewall.
Abstract:
A display device includes: first pixels in a first pixel region and connected to first scan lines; second pixels in a second pixel region that is located at a side of the first pixel region and has a width smaller than a width of the first pixel region, and connected to second scan lines; third pixels in a third pixel region that is spaced apart from the second pixel region and has a width smaller than the width of the first pixel region, and connected to third scan lines; a load matching unit in a peripheral region at an outside of the second pixel region and the third pixel region, and configured to match loads of the second scan lines and the third scan lines to that of the first scan lines; and a protection unit connected between the second and third pixels and the load matching unit.
Abstract:
A display device includes first pixels in a first pixel area and coupled with first scan lines, first scan stage circuits in a first peripheral area outside the first pixel area, and configured to supply a first scan signal to the first scan lines, second pixels in a second pixel area having a width that is less than a width of the first pixel area, and coupled with second scan lines, second scan stage circuits in a second peripheral area outside the second pixel area, and configured to generate a second scan signal, and first load matching units respectively between the second scan stage circuits, and configured to delay the second scan signal, and to supply the delayed second scan signal to the second scan lines.
Abstract:
Disclosed is a thin film transistor array panel including: a substrate including a display area and a peripheral area; a second semiconductor layer disposed on the substrate, and disposed on a first semiconductor layer disposed in the display area and the peripheral area; and a passivation layer disposed on the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer include an oxide semiconductor, and a thickness of the first semiconductor layer is different from that of the second semiconductor layer.