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公开(公告)号：US20220246708A1
公开(公告)日：2022-08-04
申请号：US17725012
申请日：2022-04-20
Applicant: Samsung Display Co., Ltd.
Inventor： Myung Soo HUH , Dong Kyun KO , Sung Chul KIM , Woo Jin KIM , Cheol Lae ROH , Keun Hee PARK
Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.
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公开(公告)号：US20190390342A1
公开(公告)日：2019-12-26
申请号：US16434256
申请日：2019-06-07
Applicant: SAMSUNG DISPLAY CO .. LTD.
Inventor： WOO JIN KIM , Dong Kyun KO , Keun Hee PARK , Myung Soo HUH , Seon Uk PARK
IPC: C23C16/455 , C23C16/50 , C23C16/40
Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first pate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction, The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20190051520A1
公开(公告)日：2019-02-14
申请号：US16103116
申请日：2018-08-14
Applicant: Samsung Display Co., Ltd.
Inventor： Dong Kyun KO , Woo Jin KIM , In Kyo KIM , Keun Hee PARK , Suk Won JUNG
IPC: H01L21/02 , H01L23/522 , H01L21/28
Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.
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公开(公告)号：US20160138157A1
公开(公告)日：2016-05-19
申请号：US14702985
申请日：2015-05-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Choel Min JANG , Myung Soo HUH , Nam HA , Dong Kyun KO , In Kyo KIM
IPC: C23C16/455 , C23C16/50 , C23C16/44
CPC classification number: C23C16/4412 , C23C16/45536 , C23C16/45551 , C23C16/45574 , C23C16/45582 , C23C16/54
Abstract: A thin film deposition apparatus, including a plurality of linear nozzle parts separated from each other; and an exhaust plate to which is attached the plurality of linear nozzle parts, each linear nozzle part including a linear body member; a pair of first reaction gas pipes in the linear body member and inflowing a first reaction gas; a second reaction gas pipe between the pair of first reaction gas pipes and inflowing a second reaction gas; and a pair of control gas pipes between each of the first reaction gas pipes and the second reaction gas pipe and inflowing a control gas controlling a flow of the second reaction gas.
Abstract translation: 一种薄膜沉积设备，包括彼此分离的多个线性喷嘴部件; 以及排气板，多个直线喷嘴部附接有排气板，每个直线喷嘴部分包括线状体部件; 一对第一反应气体管道，并且流入第一反应气体; 在所述一对第一反应气体管之间的第二反应气体管道，并流入第二反应气体; 以及在所述第一反应气体管道和所述第二反应气体管道中的每一个之间的一对控制气体管道，并且输入控制所述第二反应气体的流动的控制气体。
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公开(公告)号：US20230311404A1
公开(公告)日：2023-10-05
申请号：US17989758
申请日：2022-11-18
Applicant: Samsung Display Co., LTD.
Inventor： Kangwon LEE , Soo Beom JO , Dong Kyun KO , Kyungjoo MIN , Eun Chan LIM , Myung Soo HUH
CPC classification number: B29C59/002 , B29C59/046
Abstract: An imprint device according to an embodiment includes: a stage, which supports a substrate; a press roller, which presses a film with respect to the substrate; a first load cell and a second load cell, which are disposed corresponding to opposite ends of the press roller, respectively; and a controller, which monitors a release state of the film based on an output of the first load cell and an output of the second load cell.
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公开(公告)号：US20190326122A1
公开(公告)日：2019-10-24
申请号：US16163629
申请日：2018-10-18
Applicant: Samsung Display Co., Ltd.
Inventor： Dong Kyun KO , Woo Jin KIM , Myung Soo HUH , In Kyo KIM , Keun Hee PARK
IPC: H01L21/28 , H01L29/51 , C23C16/452 , C23C16/455 , C23C16/448
Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.
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7.发明申请公开(公告)号：US20190115409A1
公开(公告)日：2019-04-18
申请号：US16132031
申请日：2018-09-14
Applicant: Samsung Display Co., Ltd.
Inventor： Myung Soo HUH , Dong Kyun KO , Sung Chul KIM , Woo Jin KIM , Cheol Lae ROH , Keun Hee PARK
Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.
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