公开(公告)号：US20220216285A1

公开(公告)日：2022-07-07

申请号：US17608972

申请日：2020-03-30

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Oh SEO ,  Ji-Hwan KIM ,  Byung-Soo SO ,  Dong-Min LEE ,  Jong-Hoon CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

公开(公告)号：US20150001523A1

公开(公告)日：2015-01-01

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon PARK ,  Jong-Ryuk PARK ,  Yun-Mo CHUNG ,  Tak-Young LEE ,  Jin-Wook SEO ,  Ki-Yong LEE ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US20150255282A1

公开(公告)日：2015-09-10

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Tae-Hoon YANG ,  Yun-Mo CHUNG ,  Byoung-Keon PARK ,  Kil-Won LEE ,  Jong-Ryuk PARK ,  Bo-Kyung CHOI ,  Byung-Soo SO

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/32 ,  H01L21/477

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US20140346460A1

公开(公告)日：2014-11-27

申请号：US14065085

申请日：2013-10-28

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Moon KANG ,  Jong-Hyun CHOI ,  Byung-Soo SO ,  Yong-Duck SON ,  Jin-Wook SEO

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/3248

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and comprising an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract translation: 公开了一种有机发光二极管显示装置。 该器件例如包括在衬底上具有有源层的薄膜晶体管，栅电极，源电极和漏电极，形成在与栅电极相同的层上的像素电极，电极图案部分曝光 所述像素电极形成在所述像素电极上，形成在所述电极图案和所述漏电极之间并与所述漏电极电连接的像素电极接触件，所述像素限定膜暴露所述像素电极并形成为覆盖所述漏电极和所述源电极 形成在所述曝光的像素电极上并且包括发光层的中间层和与所述像素电极相对形成以至少部分地覆盖所述中间层的相对电极。 还公开了一种制造该器件的方法。