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公开(公告)号:US20170278909A1
公开(公告)日:2017-09-28
申请号:US15372427
申请日:2016-12-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Bogeon JEON , Taeyoung AHN , Sangwook LEE , Eunjeong CHO
IPC: H01L27/32 , G06F3/042 , G06K9/00 , A61B5/1171
CPC classification number: H01L27/3227 , A61B5/0077 , A61B5/1171 , A61B5/1172 , A61B5/14552 , A61B5/6898 , G06F3/0421 , G06F2203/04103 , G06K9/00013 , G06K9/0004 , G06K9/00067 , G06K2009/00932 , H01L27/3248 , H01L27/326 , H01L27/3262 , H01L27/3269 , H01L27/3272
Abstract: A display apparatus includes a first pixel, a second pixel, a light sensor, and a light shield. The first pixel has a first light-emitting device which includes a first emission layer that emits light in a first wavelength band in a first direction. The second pixel has a second light-emitting device which includes a second emission layer to emit light in a second wavelength band in a second direction different from the first direction. The second emission layer is below the first emission layer of the first light-emitting device. The light sensor senses light in the second wavelength band emitted from the second pixel and reflected by an object. The light shield is arranged along a light path incident to the light sensor.
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公开(公告)号:US20250063932A1
公开(公告)日:2025-02-20
申请号:US18939793
申请日:2024-11-07
Applicant: Samsung Display Co., Ltd.
Inventor: Kabjong SEO , Minsuk KO , Bogeon JEON
Abstract: A manufacturing method of a mask includes forming a first mask layer, forming a second mask layer on the first mask layer, forming a photoresist pattern layer on the second mask layer, removing a first area of the second mask layer, which is exposed through the photoresist pattern layer, defining an opening through the first mask layer, removing a portion of the photoresist pattern layer to expose a portion of a second area of the second mask layer, and removing the portion of the second area of the second mask layer.
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公开(公告)号:US20190011745A1
公开(公告)日:2019-01-10
申请号:US16129503
申请日:2018-09-12
Applicant: Samsung Display Co., Ltd.
Inventor: Taeyoung AHN , Bogeon JEON , Wooseok JEON , Yungbin CHUNG , Eunjeong CHO
IPC: G02F1/1368 , H01L27/12 , H01L21/027 , H01L29/49 , H01L29/66 , G02F1/136 , G02F1/1362 , H01L29/786
CPC classification number: G02F1/1368 , G02F2001/13606 , G02F2001/136218 , G02F2001/136295 , G02F2201/123 , H01L21/0273 , H01L27/1222 , H01L27/124 , H01L27/1288 , H01L29/4908 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678
Abstract: A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.
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公开(公告)号:US20170205650A1
公开(公告)日:2017-07-20
申请号:US15360736
申请日:2016-11-23
Applicant: Samsung Display Co., Ltd.
Inventor: Taeyoung AHN , Bogeon JEON , Wooseok JEON , Yungbin CHUNG , Eunjeong CHO
IPC: G02F1/1368 , H01L29/66 , H01L21/027 , H01L27/12 , H01L29/49
CPC classification number: G02F1/1368 , G02F2001/13606 , G02F2001/136218 , G02F2001/136295 , G02F2201/123 , H01L21/0273 , H01L27/1222 , H01L27/124 , H01L27/1288 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678
Abstract: A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.
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公开(公告)号:US20240107826A1
公开(公告)日:2024-03-28
申请号:US18531693
申请日:2023-12-07
Applicant: Samsung Display Co., LTD.
Inventor: Jungi Kim , Jin-Su BYUN , Jaehun LEE , Bogeon JEON , Yang-Ho JUNG
IPC: H10K59/124 , G06F3/041 , G06F3/044 , G06V40/13 , H10K50/858 , H10K59/122 , H10K59/40 , H10K71/00
CPC classification number: H10K59/124 , G06F3/0412 , G06F3/0446 , G06V40/1318 , H10K50/858 , H10K59/122 , H10K59/40 , H10K71/00 , G06F2203/04112
Abstract: A display device includes a display panel including a plurality of light emitting areas; and an input sensor disposed on the display panel and having a first conductive layer and a first insulating layer disposed on the first conductive layer. The first insulating layer includes a plurality of optical patterns that extend in a direction away from the first conductive layer.
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公开(公告)号:US20220165951A1
公开(公告)日:2022-05-26
申请号:US17463505
申请日:2021-08-31
Applicant: Samsung Display Co., Ltd.
Inventor: Kabjong SEO , Minsuk KO , Bogeon JEON
Abstract: A manufacturing method of a mask includes forming a first mask layer, forming a second mask layer on the first mask layer, forming a photoresist pattern layer on the second mask layer, removing a first area of the second mask layer, which is exposed through the photoresist pattern layer, defining an opening through the first mask layer, removing a portion of the photoresist pattern layer to expose a portion of a second area of the second mask layer, and removing the portion of the second area of the second mask layer.
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公开(公告)号:US20190103575A1
公开(公告)日:2019-04-04
申请号:US15962088
申请日:2018-04-25
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Gwuihyun PARK , Pilsoon HONG , Chulwon PARK , Bogeon JEON
Abstract: A light emitting display device and a method of manufacturing a light emitting display device, the device including a substrate; a switching element on the substrate; a first electrode connected to the switching element; a second electrode on the first electrode; a light emitting element between the first electrode and the second electrode; and a non-conductive oxide film between the first electrode and the light emitting element.
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公开(公告)号:US20160329430A1
公开(公告)日:2016-11-10
申请号:US15069043
申请日:2016-03-14
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Yungbin CHUNG , Seungkyeng CHO , Chulhyun BAEK , Injun CHOI , Bogeon JEON , Eunjeong CHO , Sunghoon YANG
IPC: H01L29/786 , H01L23/31 , H01L27/32 , G02F1/1341 , H01L21/02 , H01L27/12 , G02F1/1343 , G02F1/1368 , H01L23/29 , H01L29/66
CPC classification number: H01L29/78606 , G02F1/133345 , G02F1/1341 , G02F1/134309 , G02F1/1368 , H01L21/0217 , H01L23/291 , H01L23/3171 , H01L27/1248 , H01L27/1262 , H01L27/322 , H01L27/3258 , H01L27/3262 , H01L29/66765 , H01L29/78669
Abstract: A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.
Abstract translation: 一种显示装置,包括:第一基板; 第一基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 在半导体层上彼此隔开的源电极和漏电极; 包括氮化硅基材料的第一钝化层,在所述半导体层上,所述源电极和所述漏电极; 包括氮化硅基材料的第二钝化层和在所述第一钝化层上; 以及包括氮化硅基材料的第三钝化层,并且在所述第二钝化层上,其中所述第一钝化层中的硅的含量比率高于所述第二钝化层中的硅的含量比,并且所述硅的含量比 在第二钝化层中比第三钝化层中的硅的含量比高。
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