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公开(公告)号:US20240224761A1
公开(公告)日:2024-07-04
申请号:US18376088
申请日:2023-10-03
Applicant: Samsung Display Co., LTD.
Inventor: Joon Yong PARK , Hyun Eok SHIN , Ju Hyun LEE , Yung Bin CHUNG
IPC: H10K59/80 , H10K59/12 , H10K59/122
CPC classification number: H10K59/8791 , H10K59/1201 , H10K59/122
Abstract: A display device includes a first pixel electrode disposed in a first emission area on a substrate, an insulating layer covering an edge of the first pixel electrode, a first emissive layer disposed on the first pixel electrode and the insulating layer, a first common electrode disposed on the first emissive layer, a bank disposed on the insulating layer to surround the first emission area, a low-reflection insulating layer disposed on the bank, a first organic pattern surrounding the first emission area on the low-reflection insulating layer and including a same material as a material of the first emissive layer. The bank includes a first bank disposed on the insulating layer and contacts the first common electrode, a second bank disposed on the first bank, a third bank disposed on the second bank, and a fourth bank disposed on the third bank. The first to fourth banks include metal materials.
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公开(公告)号:US20240057410A1
公开(公告)日:2024-02-15
申请号:US18131535
申请日:2023-04-06
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Eok SHIN , Joon Yong PARK , Joon Woo BAE , Do Keun SONG , Yung Bin CHUNG
IPC: H10K59/131 , H10K59/12
CPC classification number: H10K59/131 , H10K59/1201
Abstract: A display device includes a substrate including a flat area and a trench area, which is recessed from the flat area; an electrode pattern disposed on the substrate, where the electrode pattern includes a dent portion, which is bent along a profile of the trench area of the substrate; a planarization layer inserted in the dent portion; a first insulating layer covering the substrate, the electrode pattern, and the planarization layer; and a light-emitting element disposed on the first insulating layer, where the planarization layer includes an organic-inorganic composite material.
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公开(公告)号:US20160204125A1
公开(公告)日:2016-07-14
申请号:US14799995
申请日:2015-07-15
Applicant: Samsung Display Co., Ltd.
Inventor: Yung Bin CHUNG , Chul-Hyun BAEK , Eun Jeong CHO , Jung Yun JO
IPC: H01L27/12 , H01L21/02 , H01L29/417 , H01L29/66 , H01L29/786
CPC classification number: H01L27/124 , H01L21/0217 , H01L27/1248 , H01L27/1259 , H01L29/41733 , H01L29/66765 , H01L29/78606 , H01L29/78669 , H01L29/78678
Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
Abstract translation: 薄膜晶体管阵列面板包括绝缘基板,设置在绝缘基板上的栅极线,设置在栅极线上的栅极绝缘层,设置在栅极绝缘层上的半导体层,设置在半导体层上的数据线,以及 包括源电极,设置在半导体层上并面对源电极的漏电极,设置在栅绝缘层上的第一电极,设置在第一电极上并包括氮化硅的第一钝化层,设置在第一电极上的第二钝化层 第一钝化并且包括氮化硅,以及设置在钝化层上的第二电极,其中第一钝化层中氮 - 氢键与硅 - 氢键的第一比例不同于氮 - 氢键与硅的第二比率 在第二钝化层中的氢键。
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公开(公告)号:US20240292667A1
公开(公告)日:2024-08-29
申请号:US18519369
申请日:2023-11-27
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Eok SHIN , Dong Min LEE , Woo-Seok JEON , Yung Bin CHUNG , Yu-Gwang JEONG
IPC: H10K59/122 , H10K59/12 , H10K59/80
CPC classification number: H10K59/122 , H10K59/1201 , H10K59/80522
Abstract: A display device includes a plurality of transistors disposed on a substrate, an insulating layer disposed on the transistors, a first electrode disposed on the insulating layer and electrically connected to the transistors, a partition wall disposed on the insulating layer, a common layer disposed on the partition wall and the first electrode, an emission layer disposed on the common layer, a second electrode disposed on the emission layer, and an auxiliary layer disposed on the second electrode. The partition wall includes a groove, and an inner width of the groove is greater than an inlet width of the groove.
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公开(公告)号:US20220278288A1
公开(公告)日:2022-09-01
申请号:US17744543
申请日:2022-05-13
Applicant: Samsung Display Co., LTD.
Inventor: Yeoung Keol WOO , Yung Bin CHUNG , Chul Min BAE , Ji Hye HAN , Eun Jin KWAK
Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.
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公开(公告)号:US20210074785A1
公开(公告)日:2021-03-11
申请号:US16871523
申请日:2020-05-11
Applicant: Samsung Display Co., Ltd.
Inventor: Doo Na KIM , Keun Woo KIM , Tae Wook KANG , Do Kyeong LEE , Yong Su LEE , Jae Hwan CHU , Kwang Hyun KIM , Yeoung Keol WOO , Yung Bin CHUNG
IPC: H01L27/32
Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.
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公开(公告)号:US20170207343A1
公开(公告)日:2017-07-20
申请号:US15480102
申请日:2017-04-05
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Ho JUNG , Chaun Gi CHOI , Hye Young PARK , Eun Young LEE , Joo Hee JEON , Eun Jeong CHO , Bo Geon JEON , Yung Bin CHUNG
IPC: H01L29/786 , H01L29/78 , H01L27/12
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号:US20250107343A1
公开(公告)日:2025-03-27
申请号:US18745412
申请日:2024-06-17
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Eok SHIN , Joon Yong PARK , Dong Min LEE , Yung Bin CHUNG
IPC: H10K59/122 , H10K59/12 , H10K59/80 , H10K71/60 , H10K102/00 , H10K102/10
Abstract: A display device may include a light emitting portion disposed on a base layer; a partition wall disposed adjacent to the light emitting portion; and a partition wall insulating layer covering at least a portion of the partition wall. The partition wall may include a first partition wall layer; a second partition wall layer disposed on the first partition wall layer; and a third partition wall layer disposed on the second partition wall layer. The third partition wall layer may include a Transparent Conductive Oxide (TCO) material, and the partition wall insulating layer may not cover a top surface of the light emitting portion.
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公开(公告)号:US20240334746A1
公开(公告)日:2024-10-03
申请号:US18515550
申请日:2023-11-21
Applicant: Samsung Display Co., LTD.
Inventor: Hyun Eok SHIN , Dong Min LEE , Ju Hyun LEE , Yung Bin CHUNG
IPC: H10K59/122 , H10K59/12
CPC classification number: H10K59/122 , H10K59/1201
Abstract: A display device includes a transistor layer disposed on a substrate and including at least one transistor, an insulating layer disposed on the transistor layer, a first pixel electrode disposed on the insulating layer, a first pixel defining layer covering a side surface of the first pixel electrode and a side surface of the insulating layer and defining a first emission area, a first light emitting layer disposed in the first emission area on the first pixel electrode, a first common electrode disposed on the first light emitting layer, and a bank disposed on the insulating layer and surrounding the first pixel electrode. The first pixel electrode and the bank are disposed on a same layer and include a same material.
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公开(公告)号:US20240162235A1
公开(公告)日:2024-05-16
申请号:US18509934
申请日:2023-11-15
Applicant: Samsung Display Co., LTD.
Inventor: Yeoung Keol WOO , Sang Wook LEE , Yeon Hong KIM , Yung Bin CHUNG
IPC: H01L27/12 , H01L25/075 , H01L25/16
CPC classification number: H01L27/1225 , H01L25/0753 , H01L25/167 , H01L27/127
Abstract: A display device includes: a substrate; a first semiconductor layer and a dummy semiconductor layer on the same layer on a surface of the substrate and comprising the same material as each other; a second semiconductor layer overlapping the dummy semiconductor layer in a direction perpendicular to the surface of the substrate, the first semiconductor layer and the second semiconductor layer comprising different materials from each other; a first transistor comprising the first semiconductor layer, a first source electrode, and a first drain electrode, the first source electrode and the first drain electrode being connected to the first semiconductor layer; a second transistor comprising the second semiconductor layer, a second source electrode, and a second drain electrode, the second source electrode and the second drain electrode being connected to the second semiconductor layer; and a light- emitting element connected to the first transistor.
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