公开(公告)号：US10535510B2

公开(公告)日：2020-01-14

申请号：US14809028

申请日：2015-07-24

申请人： Samsung Display Co., Ltd.

发明人： Bong-Kyun Kim ,  Young-Min Moon ,  Soo-Min An

IPC分类号： H01L21/02

摘要： A substrate-treating apparatus includes a liquid-providing part, a first liquid-removing knife and a returning part. The liquid-providing part provides a first liquid chemical for cleaning a substrate that includes a metal pattern and a photoresist pattern on the metal pattern, and for removing an etchant that remains on the substrate. The first liquid-removing knife sprays a second liquid chemical in a direction inclined and opposite to a returning direction of the substrate, so as to remove the first liquid chemical, the first liquid chemical including a metal precipitate. The returning part returns the substrate from the liquid-providing part toward the first liquid-removing knife in the returning direction.

公开(公告)号：US09305940B2

公开(公告)日：2016-04-05

申请号：US14463574

申请日：2014-08-19

申请人： Samsung Display Co., LTD.

发明人： Bong-Kyun Kim ,  Young-Min Moon

IPC分类号： H01L29/10 ,  H01L29/04 ,  H01L29/12 ,  H01L21/00 ,  H01L27/12 ,  H01L29/45 ,  H01L21/441 ,  H01L21/465 ,  H01L21/467 ,  H01L21/768 ,  H01L21/3213 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/32134 ,  H01L21/441 ,  H01L21/465 ,  H01L21/467 ,  H01L21/76846 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

摘要： A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.

摘要翻译： 薄膜晶体管包括栅电极，与栅电极重叠并且包括半导体氧化物的有源图案，以及设置在有源图案上的源极金属图案，并且包括与源电极间隔开的源电极和漏电极。 活性图案使得源金属图案的下表面的整个部分下垂，并且由于活性图案具有基本上大于上覆的相应和相邻侧壁锥角的侧壁锥角而最小地突出超过源金属图案的横向端部 源金属图案。 因此，可以降低寄生电容并提高性能。

公开(公告)号：US09257456B2

公开(公告)日：2016-02-09

申请号：US14541878

申请日：2014-11-14

申请人： Samsung Display Co., Ltd.

发明人： Young-Min Moon ,  Hong-Sick Park

IPC分类号： H01L27/12 ,  H01L29/423

CPC分类号： H01L27/1259 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L2029/42388

摘要： A method of forming a metal pattern includes disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern including a gate electrode, in which the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer.

摘要翻译： 形成金属图案的方法包括在基板上设置栅极金属层; 在栅极金属层上设置光致抗蚀剂层; 蚀刻光致抗蚀剂层的部分以形成第一照片图案; 蚀刻栅极金属层的部分以形成包括栅电极的栅极图案，其中栅极金属层使用第一照片图案作为掩模进行图案化; 灰化所述第一照片图案的端部以形成第二照片图案; 在所述基板和所述第二照片图案上设置第一栅极绝缘层; 去除第二照片图案和设置在第二照片图案上的第一栅极绝缘层的一部分; 以及在所述栅极图案和所述第一栅极绝缘层的剩余部分上方设置第二绝缘层。