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公开(公告)号：US20180082839A1
公开(公告)日：2018-03-22
申请号：US15561360
申请日：2016-03-02
IPC分类号： H01L21/02 , H01L49/02 , H01L21/3213 , H01L21/66 , H01L21/78 , H01L21/311 , H01L27/11507 , H01L41/187 , H01L41/29 , H01L41/314 , H01L41/332 , H01L37/02
CPC分类号： H01L21/02197 , H01J2237/3341 , H01L21/02266 , H01L21/31111 , H01L21/32136 , H01L21/32139 , H01L21/78 , H01L22/26 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/65 , H01L37/025 , H01L41/0477 , H01L41/187 , H01L41/1873 , H01L41/29 , H01L41/314 , H01L41/332
摘要： This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.
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公开(公告)号：US20190115525A1
公开(公告)日：2019-04-18
申请号：US16217455
申请日：2018-12-12
发明人： Fumimasa HORIKIRI , Kenji SHIBATA , Kazutoshi WATANABE , Kazufumi SUENAGA , Masaki NOGUCHI , Kenji KUROIWA
IPC分类号： H01L41/316 , H01L41/187 , H01L41/332 , H01L21/308 , H01L41/113 , C23C14/08 , C23C14/34
摘要： This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
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公开(公告)号：US20180108530A1
公开(公告)日：2018-04-19
申请号：US15560679
申请日：2016-03-17
发明人： Fumimasa HORIKIRI , Kenji SHIBATA , Kazutoshi WATANABE , Kazufumi SUENAGA , Masaki NOGUCHI , Kenji KUROIWA
IPC分类号： H01L21/308 , H01L41/187 , H01L41/316 , H01L41/332
CPC分类号： H01L21/308 , H01L41/187 , H01L41/1873 , H01L41/316 , H01L41/332
摘要： This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
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公开(公告)号：US20180114896A1
公开(公告)日：2018-04-26
申请号：US15561392
申请日：2016-03-02
IPC分类号： H01L41/187 , C23C14/34 , H01L41/09 , H01L41/113 , H01L41/45
CPC分类号： H01L41/187 , C01G33/00 , C23C14/34 , H01L27/105 , H01L41/0477 , H01L41/09 , H01L41/113 , H01L41/1873 , H01L41/29 , H01L41/316 , H01L41/45
摘要： There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode intermediate layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4≤x≤0.7); the upper electrode layer is made of aluminum or an aluminum alloy; the upper electrode intermediate layer is made of a metal that has less oxidizability than titanium and can generate an intermetallic compound with Aluminum; and a part of the upper electrode intermediate layer and a part of the upper electrode layer are alloyed.
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公开(公告)号：US20180108828A1
公开(公告)日：2018-04-19
申请号：US15561405
申请日：2016-03-02
IPC分类号： H01L41/187 , H01L41/09 , C23C14/34 , H01L41/113 , H01L41/45 , H01L41/312 , H01L41/316
CPC分类号： H01L41/187 , C23C14/34 , H01L27/105 , H01L37/02 , H01L41/047 , H01L41/09 , H01L41/113 , H01L41/22 , H01L41/29 , H01L41/312 , H01L41/316 , H01L41/45
摘要： There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4≤x≤0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.
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公开(公告)号：US20180062068A1
公开(公告)日：2018-03-01
申请号：US15559870
申请日：2016-03-02
IPC分类号： H01L41/187 , H01L37/02 , H01L41/047 , H01L41/29 , H01L41/332 , H01L41/316 , H01L41/338 , H01L41/43
CPC分类号： H01L41/1873 , C23C14/34 , C23C14/35 , H01L21/02071 , H01L21/0209 , H01L21/304 , H01L37/025 , H01L41/0477 , H01L41/29 , H01L41/316 , H01L41/332 , H01L41/338 , H01L41/43
摘要： There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.
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公开(公告)号：US20180026176A1
公开(公告)日：2018-01-25
申请号：US15548543
申请日：2016-01-19
发明人： Fumimasa HORIKIRI , Kenji SHIBATA , Kazutoshi WATANABE , Kazufumi SUENAGA , Masaki NOGUCHI , Kenji KUROIWA
IPC分类号： H01L41/316 , C23C14/34 , H01L41/113 , H01L41/332 , H01L41/187
CPC分类号： H01L41/316 , C23C14/08 , C23C14/34 , H01L21/308 , H01L41/113 , H01L41/187 , H01L41/1873 , H01L41/332
摘要： This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
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公开(公告)号：US20160284975A1
公开(公告)日：2016-09-29
申请号：US15171804
申请日：2016-06-02
IPC分类号： H01L41/187 , H01L41/314 , H01L41/08 , H01L41/332
CPC分类号： H01L41/1873 , H01L41/0805 , H01L41/314 , H01L41/316 , H01L41/332
摘要： There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.
摘要翻译： 提供一种铌酸盐系铁电薄膜元件的制造方法，其特征在于，包括：在基板上形成下部电极膜的下部电极成膜工序; 在下电极膜上形成铌酸盐系铁电薄膜的铌酸盐系铁电薄膜形成工序; 在铌酸盐系铁电薄膜上形成期望的蚀刻掩模图案的蚀刻掩模形成步骤; 以及铁电薄膜蚀刻步骤，通过使用包括螯合剂的碱性水溶液的蚀刻剂进行湿蚀刻来形成所述铌酸盐系铁电薄膜的所需精细图案。
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