公开(公告)号：US20240321768A1

公开(公告)日：2024-09-26

申请号：US18188720

申请日：2023-03-23

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YongMoo Shin ,  HeeSoo Lee ,  HeeYoun Kim

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/66

CPC classification number: H01L23/552 ,  H01L21/565 ,  H01L23/29 ,  H01L23/66 ,  H01L24/16 ,  H01L2223/6661 ,  H01L2224/16227 ,  H01L2924/186 ,  H01L2924/3025

Abstract: A semiconductor device has a substrate and an electrical component disposed over the substrate. A first encapsulant is deposited over the electrical component and substrate. A first shielding layer with a graphene core shell is formed on a surface of the first encapsulant. A second encapsulant is deposited over the first encapsulant and first shielding layer. A second shielding layer is formed over the second encapsulant. The first shielding layer is formed at least partially in an opening of the first encapsulant. The graphene core shell has a copper core. The first shielding layer has a plurality of cores covered by graphene and the graphene is interconnected within the first shielding layer to form an electrical path. The electrical path dissipates any charge incident on shielding layer, such as an ESD event, to reduce or inhibit the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US20240258246A1

公开(公告)日：2024-08-01

申请号：US18635819

申请日：2024-04-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YongKook Shin ,  KyoWang Koo ,  HeeYoun Kim ,  SeongKuk Kim

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31

CPC classification number: H01L23/552 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/3121

Abstract: A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.

公开(公告)号：US11990421B2

公开(公告)日：2024-05-21

申请号：US17648365

申请日：2022-01-19

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YongKook Shin ,  KyoWang Koo ,  HeeYoun Kim ,  SeongKuk Kim

IPC: H01L21/52 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/552

CPC classification number: H01L23/552 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/3121

Abstract: A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.

公开(公告)号：US20230230934A1

公开(公告)日：2023-07-20

申请号：US17648365

申请日：2022-01-19

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YongKook Shin ,  KyoWang Koo ,  HeeYoun Kim ,  SeongKuk Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/50 ,  H01L21/48

CPC classification number: H01L23/552 ,  H01L23/3121 ,  H01L21/50 ,  H01L21/4871

Abstract: A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.