公开(公告)号：US09030030B2

公开(公告)日：2015-05-12

申请号：US13760187

申请日：2013-02-06

Applicant: STATS ChipPAC, Ltd.

Inventor： KyungHoon Lee ,  KiYoun Jang ,  JoonDong Kim

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/13 ,  H01L23/31 ,  H01L21/50 ,  H01L23/00

CPC classification number: H01L23/49811 ,  H01L21/50 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device has a flipchip or PoP semiconductor die mounted to a die attach area interior to a substrate. The substrate has a contact pad area around the die attach area and flow control area between the die attach area and contact pad area. A first channel is formed in a surface of the substrate within the flow control area. The first channel extends around a periphery of the die attach area. A first dam material is formed adjacent to the first channel within the flow control area. An underfill material is deposited between the die and substrate. The first channel and first dam material control outward flow of the underfill material to prevent excess underfill material from covering the contact pad area. A second channel can be formed adjacent to the first dam material. A second dam material can be formed adjacent to the first channel.

Abstract translation: 半导体器件具有安装到衬底内部的管芯附着区域的倒装芯片或PoP半导体管芯。 基板在芯片附着区域周围具有接触焊盘区域以及管芯附着区域和接触焊盘区域之间的流动控制区域。 第一通道形成在流动控制区域内的基板的表面中。 第一通道围绕芯片附接区域的周边延伸。 在流动控制区域内与第一通道相邻地形成第一坝材料。 在模具和衬底之间沉积底部填充材料。 第一通道和第一坝材料控制底部填充材料的向外流动，以防止多余的底部填充材料覆盖接触垫区域。 可以与第一坝材料相邻地形成第二通道。 可以在第一通道附近形成第二坝材料。

公开(公告)号：US20130147065A1

公开(公告)日：2013-06-13

申请号：US13760187

申请日：2013-02-06

Applicant: STATS ChipPAC, Ltd.

Inventor： KyungHoon Lee ,  KiYoun Jang ,  JoonDong Kim

IPC: H01L23/498 ,  H01L21/50

CPC classification number: H01L23/49811 ,  H01L21/50 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device has a flipchip or PoP semiconductor die mounted to a die attach area interior to a substrate. The substrate has a contact pad area around the die attach area and flow control area between the die attach area and contact pad area. A first channel is formed in a surface of the substrate within the flow control area. The first channel extends around a periphery of the die attach area. A first dam material is formed adjacent to the first channel within the flow control area. An underfill material is deposited between the die and substrate. The first channel and first dam material control outward flow of the underfill material to prevent excess underfill material from covering the contact pad area. A second channel can be formed adjacent to the first dam material. A second dam material can be formed adjacent to the first channel.

Abstract translation: 半导体器件具有安装到衬底内部的管芯附着区域的倒装芯片或PoP半导体管芯。 基板在芯片附着区域周围具有接触焊盘区域以及管芯附着区域和接触焊盘区域之间的流动控制区域。 第一通道形成在流动控制区域内的基板的表面中。 第一通道围绕芯片附接区域的周边延伸。 在流动控制区域内与第一通道相邻地形成第一坝材料。 在模具和衬底之间沉积底部填充材料。 第一通道和第一坝材料控制底部填充材料的向外流动，以防止多余的底部填充材料覆盖接触垫区域。 可以与第一坝材料相邻地形成第二通道。 可以在第一通道附近形成第二坝材料。

公开(公告)号：US20140159236A1

公开(公告)日：2014-06-12

申请号：US14181429

申请日：2014-02-14

Applicant: STATS ChipPAC, Ltd.

Inventor： BaeYong Kim ,  KiYoun Jang ,  JoonDong Kim

IPC: H01L23/00

CPC classification number: H01L24/11 ,  C23F11/149 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014

Abstract: An interconnect structure for a semiconductor device is made by forming a contact pad on a substrate, forming an under bump metallization layer over the contact pad, forming a photoresist layer over the substrate, removing a portion of the photoresist layer to form an opening which exposes the UBM, depositing a first conductive material into the opening of the photoresist, removing the photoresist layer, depositing a second conductive material over the first conductive material, and coating the second conductive material with an organic solderability preservative. The interconnect structure is formed without solder reflow. The first conductive layer is nickel and the second conductive layer is copper. The organic solderability preservative is made with benzotriazole, rosin, rosin esters, benzimidazole compounds, or imidazole compounds. The interconnect structure decreases the pitch between the core pillars in the interconnect array and increases the density of I/O contacts on the semiconductor device.

Abstract translation: 半导体器件的互连结构通过在衬底上形成接触焊盘，在接触焊盘上形成凸起下金属化层，在衬底上形成光致抗蚀剂层，去除光致抗蚀剂层的一部分以形成露出的开口 UBM，将第一导电材料沉积到光致抗蚀剂的开口中，去除光致抗蚀剂层，在第一导电材料上沉积第二导电材料，以及用有机可焊性防腐剂涂覆第二导电材料。 互连结构形成，无需焊锡回流。 第一导电层是镍，第二导电层是铜。 有机可焊性防腐剂由苯并三唑，松香，松香酯，苯并咪唑化合物或咪唑化合物制成。 互连结构减小了互连阵列中的芯柱之间的间距，并且增加了半导体器件上的I / O触点的密度。