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1.发明授权公开(公告)号：US11800257B2
公开(公告)日：2023-10-24
申请号：US17250516
申请日：2019-04-26
IPC分类号： H04N25/772 , H03F3/34 , H03M1/56
CPC分类号： H04N25/772 , H03F3/34 , H03M1/56
摘要： In a solid-state imaging element in which AD conversion using a reference signal is performed, power consumption of a circuit that generates the reference signal is reduced. A pixel section outputs a pixel signal based on the light amount of incident light. A reference signal supply section generates a first reference signal and a second reference signal. A comparison section includes a first differential pair transistor to which the pixel signal and a signal based on the first reference signal are inputted and a second differential pair transistor to which the second reference signal is inputted. A counter section performs counting on the basis of a signal from the comparison section.
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公开(公告)号：US20230209227A1
公开(公告)日：2023-06-29
申请号：US17928478
申请日：2021-05-19
发明人： Tomonori Yamashita , Atsushi Muto
IPC分类号： H04N25/79 , H04N25/772
CPC分类号： H04N25/79 , H04N25/772
摘要： Imaging devices with increased numbers of parallel analog-digital converters with maintained chip size are disclosed. In one example, an imaging device has a stacked chip structure including semiconductor chips of first through third layers. A pixel array is formed on the semiconductor chip of the first layer. An analog circuit of an analog-digital converter is disposed on the semiconductor chip of the second or third layer. A digital circuit of the analog-digital converter is disposed on the other of the semiconductor chip of the second or third layer.
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公开(公告)号：US11418749B2
公开(公告)日：2022-08-16
申请号：US16647048
申请日：2018-09-04
发明人： Takashi Moue , Yosuke Ueno , Tomonori Yamashita , Kazunori Hasebe
IPC分类号： H04N5/378 , H01L27/146 , H04N5/374 , H04N5/369
摘要： A solid-state image pick-up device of the present disclosure includes a pixel array unit obtained by disposing a plurality of unit pixels, each of which includes a photoelectric conversion unit, in a matrix form, an amplifier unit that adjusts a level of a pixel signal output from a unit pixel through a vertical signal line provided to correspond to column arrangement of the pixel array unit, a sample and hold unit that samples and holds a pixel signal passing through the amplifier unit, and an analog-digital conversion unit that converts the pixel signal output from the sample and hold unit into a digital signal. Further, the sample and hold unit includes at least three capacitors that hold pixel signals and performs fetching of a pixel signal to one capacitor and outputting of an image signal fetched to another capacitor in advance to the analog-digital conversion unit in parallel.
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公开(公告)号：US11240455B2
公开(公告)日：2022-02-01
申请号：US16319181
申请日：2017-07-14
发明人： Tomonori Yamashita , Yosuke Ueno , Atsumi Niwa
IPC分类号： H04N5/378 , H03M1/56 , H04N5/3745
摘要： The present technology relates to an AD conversion device, an AD conversion method, an image sensor, and an electronic apparatus that are able to achieve high-speed, low-power-consumption AD conversion. In a case where an electrical signal and a variable-level reference signal are compared by a comparator and the result of comparison is used to perform AD (Analog to Digital) conversion of the electrical signal, control is exercised in such a manner that a bias current flowing in the comparator to operate the comparator during a certain section of the reference signal including a section where the reference signal changes is increased from a first current, which is larger than 0 (zero), to a second current, which is larger than the first current. The present technology is applicable, for example, to AD conversion of an electrical signal.
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公开(公告)号：US20230247329A1
公开(公告)日：2023-08-03
申请号：US18132346
申请日：2023-04-07
发明人： Atsumi Niwa , Tomonori Yamashita , Takashi Moue , Yosuke Ueno
IPC分类号： H04N25/772 , H03K5/24 , H03M1/34 , H04N25/75
CPC分类号： H04N25/772 , H03K5/2481 , H03M1/34 , H04N25/75
摘要： Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.
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公开(公告)号：US20230247324A1
公开(公告)日：2023-08-03
申请号：US17926789
申请日：2021-05-11
发明人： Tomonori Yamashita
摘要： Solid-state imaging elements are disclosed. In one example, a solid-state imaging element includes a plurality of pixels. A pixel signal line transmits a pixel signal of a pixel, a reference signal line transmits a reference signal to be compared with the pixel signal, a first comparator outputs a first output signal according to the pixel signal on the basis of a voltage difference between the pixel signal and the reference signal, a second comparator outputs a second output signal according to the pixel signal on the basis of the voltage difference between the pixel signal and the reference signal, a first capacitor unit between the pixel signal line or the reference signal line and the first comparator and set to a first gain, and a second capacitor unit between the pixel signal line or the reference signal line and the second comparator and set to a second gain.
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公开(公告)号：US20210368125A1
公开(公告)日：2021-11-25
申请号：US17326242
申请日：2021-05-20
发明人： Atsumi Niwa , Tomonori Yamashita , Takashi Moue , Yosuke Ueno
IPC分类号： H04N5/3745 , H03K5/24 , H03M1/34 , H04N5/378
摘要： Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.
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公开(公告)号：US20240348947A1
公开(公告)日：2024-10-17
申请号：US18293862
申请日：2022-03-24
IPC分类号： H04N25/772
CPC分类号： H04N25/772
摘要： [Problem] An imaging device that can increase the dynamic range of pixel signals is provided.
[Means of Solution] An imaging device according to an embodiment of the present disclosure includes: a plurality of pixels that are exposed during a same period; and an AD converter that digitizes an analog pixel signal output from each of the plurality of pixels. Further, each of the plurality of pixels includes a photoelectric conversion circuit that photoelectrically converts incident light, a first source follower circuit that amplifies an output signal of the photoelectric conversion circuit, a signal holding circuit that holds an output signal of the first source follower circuit, and a second source follower circuit that amplifies a signal read out from the signal holding circuit and outputs the signal as the pixel signal. Furthermore, a ramp signal including a slope portion in which a voltage level changes like a ramp is supplied to the signal holding circuit.-
公开(公告)号：US11901391B2
公开(公告)日：2024-02-13
申请号：US17620258
申请日：2020-06-26
IPC分类号： H01L27/146 , H01L23/522 , H04N25/75 , H04N25/79
CPC分类号： H01L27/14636 , H01L23/5225 , H01L27/14634 , H01L27/14645 , H04N25/75 , H04N25/79
摘要： An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.
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公开(公告)号：US20230421927A1
公开(公告)日：2023-12-28
申请号：US18249390
申请日：2021-10-25
发明人： Takashi Moue , Yosuke Ueno , Tomonori Yamashita , Youhei Oosako , Kengo Umeda
摘要： To provide an image capturing device capable of suppressing a decrease of a dynamic range of the entire image capturing device caused by an input transistor of a comparator inserted between a signal line and a load current source in an analog-digital converter.
The image capturing device of the present disclosure includes: a load current source; a comparator that includes an input transistor connected between a signal line that transmits a signal read from a pixel and the load current source; and a reference signal supply section that supplies a predetermined reference signal to a charge-voltage conversion section of the pixel.
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