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    Solid-state imaging device
    6.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US11082656B2

    公开(公告)日：2021-08-03

    申请号：US16484946

    申请日：2018-07-17

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Atsumi Niwa

    IPC分类号： H04N5/369 ,  H04N5/3745 ,  H01L27/146

    摘要： To a mounting area in a solid-state imaging device that detects an address event.
    The solid-state imaging device includes a light receiving chip and a detection chip. In the solid-state imaging device including the light receiving chip and the detection chip, the light receiving chip includes a photodiode that photoelectrically converts incident light and generates a photocurrent. In addition, in the solid-state imaging device, the detection chip quantizes a voltage signal corresponding to the photocurrent generated by the photodiode in the light receiving chip and outputs the voltage signal as a detection signal.

    Solid-state imaging device, imaging method, and electronic apparatus
    9.
    发明授权
    Solid-state imaging device, imaging method, and electronic apparatus 有权

    公开(公告)号：US12088936B2

    公开(公告)日：2024-09-10

    申请号：US18003417

    申请日：2021-06-28

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Terukazu Tanaka ,  Atsumi Niwa

    IPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778

    CPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778 ,  H03G2201/103

    摘要： An imaging device includes pixel circuit including a generation unit generating a voltage; a capacitor having a first electrode to which the voltage is applied; a first amplifier having a first input terminal, connected to a second electrode of the capacitor, and a second input terminal, to which a first reference voltage is applied to, to output a result by comparing the voltage with the first reference voltage; a switch unit controlling a connection between the output of the first amplifier and the first input terminal; and a second amplifier having a third input terminal, to which the output of the first amplifier is connected, and a fourth input terminal, to which a second reference voltage is applied, to output a result by comparing the voltage with the second reference voltage, in which a first gain of the first amplifier is lower than a second gain of the second amplifier.

    Solid-state imaging apparatus and imaging apparatus
    10.
    发明授权
    Solid-state imaging apparatus and imaging apparatus 有权

    公开(公告)号：US11910108B2

    公开(公告)日：2024-02-20

    申请号：US18153488

    申请日：2023-01-12

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Atsumi Niwa ,  Motonari Honda

    IPC分类号： H04N25/40 ,  H04N25/44 ,  H04N25/74 ,  H04N25/75 ,  H04N25/443 ,  H04N25/445 ,  H04N25/00

    CPC分类号： H04N25/40 ,  H04N25/00 ,  H04N25/44 ,  H04N25/443 ,  H04N25/445 ,  H04N25/74 ,  H04N25/75

    摘要： Time deviation between event detection and gradation acquisition is reduced. A solid-state imaging apparatus according to an embodiment includes: a pixel array unit (300) including a plurality of pixel blocks (310) arrayed in a matrix; and a drive circuit (211) that generates a pixel signal in a first pixel block in which firing of an address event has been detected among the plurality of pixel blocks, each of the plurality of pixel blocks including a first photoelectric conversion element (331) that generates an electric charge according to an amount of incident light, a detection unit (400) that detects the firing of the address event based on the electric charge generated in the first photoelectric conversion element, a second photoelectric conversion element (321) that generates an electric charge according to an amount of incident light, and a pixel circuit (322, 323, 324, 325, 326) that generates a pixel signal based on the electric charge generated in the second photoelectric conversion element.