公开(公告)号：US20230329016A1

公开(公告)日：2023-10-12

申请号：US18333748

申请日：2023-06-13

Applicant: SONY GROUP CORPORATION

Inventor： YUKIO KANEDA ,  RYOJI ARAI ,  TOSHIKI MORIWAKI

IPC: H01L31/06 ,  G01T1/36

CPC classification number: H10K30/80 ,  G01T1/366 ,  H10K39/32 ,  H10K39/10

Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

公开(公告)号：US20220255027A1

公开(公告)日：2022-08-11

申请号：US17611980

申请日：2020-04-30

Applicant: SONY GROUP CORPORATION

Inventor： TOSHIKI MORIWAKI ,  HIROSHI NAKANO ,  YOICHIRO IINO

IPC: H01L51/42 ,  H01L27/30 ,  H01L29/24

Abstract: An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and when a composition of an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B is represented by MaNbSncO (where M denotes an aluminum (Al) atom, and N denotes a gallium atom (Ga) or a zinc (Zn) atom, or a gallium (Ga) atom and a zinc (Zn) atom), a+b+c=1.00, 0.01≤a≤0.04, and b

公开(公告)号：US20240057362A1

公开(公告)日：2024-02-15

申请号：US18483162

申请日：2023-10-09

Applicant: SONY GROUP CORPORATION

Inventor： TOSHIKI MORIWAKI

IPC: H10K39/32 ,  H10K30/30

CPC classification number: H10K39/32 ,  H10K30/30

Abstract: An imaging element 10 includes a first electrode 21, a charge accumulation electrode 24 disposed apart from the first electrode 21, a photoelectric conversion unit 23 formed in contact with the first electrode 21 and above the charge accumulation electrode 24 with an insulation layer 82 interposed between the photoelectric conversion unit 23 and the charge accumulation electrode 24, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes a photoelectric conversion layer 23A and an inorganic oxide semiconductor material layer 23B disposed in an order of the photoelectric conversion layer 23A and the inorganic oxide semiconductor material layer 23B from the second electrode side. The inorganic oxide semiconductor material layer 23B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.

公开(公告)号：US20220393045A1

公开(公告)日：2022-12-08

申请号：US17760060

申请日：2021-01-11

Applicant: SONY GROUP CORPORATION

Inventor： YOICHIRO IINO ,  HIROSHI NAKANO ,  TOSHIKI MORIWAKI

IPC: H01L31/032 ,  H01L31/109

Abstract: An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.