公开(公告)号：US20220255027A1

公开(公告)日：2022-08-11

申请号：US17611980

申请日：2020-04-30

Applicant: SONY GROUP CORPORATION

Inventor： TOSHIKI MORIWAKI ,  HIROSHI NAKANO ,  YOICHIRO IINO

IPC: H01L51/42 ,  H01L27/30 ,  H01L29/24

Abstract: An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and when a composition of an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B is represented by MaNbSncO (where M denotes an aluminum (Al) atom, and N denotes a gallium atom (Ga) or a zinc (Zn) atom, or a gallium (Ga) atom and a zinc (Zn) atom), a+b+c=1.00, 0.01≤a≤0.04, and b

公开(公告)号：US20240355842A1

公开(公告)日：2024-10-24

申请号：US18683016

申请日：2022-03-17

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

Inventor： YOICHIRO IINO ,  HIROSHI NAKANO ,  NOBUHIKO NISHIYA ,  YOSHIYUKI HIRANO

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14636

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed in parallel; a third electrode that is disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer that is provided between the first electrode and second electrode, and the third electrode, and includes an organic material; and a semiconductor layer including a first layer and a second layer that are stacked in order from side of the first electrode and the second electrode between the first electrode and second electrode, and the photoelectric conversion layer, in which the first layer includes a first oxide semiconductor material, the second layer includes a second oxide semiconductor material including indium (In), gallium (Ga), zinc (Zn), and tin (Sn), and a composition ratio of In, Ga, Zn, and Sn in the second oxide semiconductor material satisfies formulas (1), (2), and (3).

公开(公告)号：US20220393045A1

公开(公告)日：2022-12-08

申请号：US17760060

申请日：2021-01-11

Applicant: SONY GROUP CORPORATION

Inventor： YOICHIRO IINO ,  HIROSHI NAKANO ,  TOSHIKI MORIWAKI

IPC: H01L31/032 ,  H01L31/109

Abstract: An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.