Abstract:
An image signal output unit is controlled in accordance with a first control signal indicating either voltage state of an on voltage for causing a conductive state and an off voltage having a polarity different from that of the on voltage, and outputs an analog image signal corresponding to the electric charge held by an electric charge holding unit in the conductive state. A reset unit is controlled in accordance with a second control signal indicating either voltage state of the on voltage and the off voltage, resets the electric charge holding unit in the conductive state, transmits a fluctuation in the off voltage to the electric charge holding unit, and fluctuates the analog image signal. A reference signal generation unit generates a reference signal being a signal serving as a reference used when conversion from an analog image signal output from the image signal output unit into a digital image signal is performed. A reference signal correction unit corrects the generated reference signal in accordance with the fluctuation in the off voltage. An analog-to-digital conversion unit performs the conversion on the basis of the corrected reference signal.
Abstract:
The present technique relates to an image pickup element and an electronic apparatus which enable a higher-quality image to be obtained. An image pickup element includes an input sense portion configured to produce a noise correction signal portion includes a first transistor and a second transistor configuring a current mirror circuit, a switch provided between a gate of the first transistor and a gate of the second transistor, and a capacitive element one electrode of which is connected between the switch and the gate of the second transistor on an output side of the current mirror circuit, and the other electrode of which is connected to the predetermined power source.
Abstract:
A semiconductor apparatus, a solid-state image sensing apparatus, and a camera system capable of reducing interference between signals transmitted through adjacent via holes, preventing an increase in the number of the via holes, reducing the area of a chip having sensors thereon and the number of mounting steps thereof. First and second chips are bonded together to form a laminated structure, a wiring between the first chip and the second chip being connected through via holes, the first chip transmitting signals obtained by time-discretizing analog signals generated by respective sensors to the second chip through the corresponding via holes, the second chip sampling the signals transmitted from the first chip through the via holes at a timing different from a timing at which the signals are sampled by the first chip and quantizing the sampled signals to obtain digital signals.
Abstract:
Disclosed herein is a comparator including: a first input sampling capacitance; a second input sampling capacitance; an output node; a transconductance (Gm) amplifier as a differential comparator section configured to receive a slope signal, a signal level of the slope signal changing with a slope, at one input terminal of the Gm amplifier via the first input sampling capacitance, and receive an input signal at another input terminal of the Gm amplifier via the second input sampling capacitance, and subject the slope signal and the input signal to comparing operation; and an isolator configured to hold a voltage of an output section of the Gm amplifier constant, the isolator being disposed between the output section of the Gm amplifier and the output node.
Abstract:
There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.
Abstract:
There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.
Abstract:
A semiconductor apparatus, a solid-state image sensing apparatus, and a camera system capable of reducing interference between signals transmitted through adjacent via holes, preventing an increase in the number of the via holes, reducing the area of a chip having sensors thereon and the number of mounting steps thereof. First and second chips are bonded together to form a laminated structure, a wiring between the first chip and the second chip being connected through via holes, the first chip transmitting signals obtained by time-discretizing analog signals generated by respective sensors to the second chip through the corresponding via holes, the second chip sampling the signals transmitted from the first chip through the via holes at a timing different from a timing at which the signals are sampled by the first chip and quantizing the sampled signals to obtain digital signals.
Abstract:
An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.
Abstract:
A semiconductor apparatus, a solid-state image sensing apparatus, and a camera system capable of reducing interference between signals transmitted through adjacent via holes, preventing an increase in the number of the via holes, reducing the area of a chip having sensors thereon and the number of mounting steps thereof. First and second chips are bonded together to form a laminated structure, a wiring between the first chip and the second chip being connected through via holes, the first chip transmitting signals obtained by time-discretizing analog signals generated by respective sensors to the second chip through the corresponding via holes, the second chip sampling the signals transmitted from the first chip through the via holes at a timing different from a timing at which the signals are sampled by the first chip and quantizing the sampled signals to obtain digital signals.
Abstract:
An analog-to-digital conversion device includes a plurality of counting period supply units that supply a period of length according to a voltage of an analog signal inputted into each counting period supply unit based on the voltage of the analog signal as a counting period, a plurality of counter circuits which are connected to a common power supply and which perform a counting operation that counts a count value in the counting period different from each other and generate a digital signal indicating the count value, and a plurality of compensation circuits which are connected to the power supply and which operate so that the greater the number of counter circuits that stop the counting operation among the plurality of counter circuits, the greater the number of the compensation circuits that operate.