公开(公告)号：US10412287B2

公开(公告)日：2019-09-10

申请号：US16251559

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H04N5/369 ,  H01L27/146 ,  H04N5/359 ,  H04N9/04 ,  H01L31/0232 ,  H04N5/374 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US11277578B2

公开(公告)日：2022-03-15

申请号：US17088133

申请日：2020-11-03

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US11076078B2

公开(公告)日：2021-07-27

申请号：US16885734

申请日：2020-05-28

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H04N5/369 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09748296B2

公开(公告)日：2017-08-29

申请号：US14417590

申请日：2013-07-25

Applicant: SONY CORPORATION

Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

IPC: H01L23/62 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

公开(公告)号：US20170025455A1

公开(公告)日：2017-01-26

申请号：US15282826

申请日：2016-09-30

Applicant: Sony Corporation

Inventor： Harumi Ikeda ,  Atsuhiko Yamamoto ,  Yoshiki Ebiko ,  Takeshi Yanagita

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.

Abstract translation: 一种成像装置包括：光电二极管，被配置为执行光电转换并根据接收的光量产生电荷; 浮置扩散部，被配置为累积在所述光电二极管中产生的电荷; 读取电路，被配置为输出具有根据在浮动扩散部中累积的电荷的电平的电压的像素信号，所述读取电路包括一个或多个晶体管，每个晶体管具有电连接到所使用的布线的栅极 用于选择像素; 以及绝缘部分，其延伸到所述浮动扩散部分的底表面的一部分或全部，所述一个或多个晶体管中的源极 - 漏极区域的底表面的一部分或全部，或两者都相同。 光电二极管，浮动扩散部分，读取电路和绝缘部分设置在半导体层中。

公开(公告)号：US20150041942A1

公开(公告)日：2015-02-12

申请号：US14449825

申请日：2014-08-01

Applicant: Sony Corporation

Inventor： Yoshiki Ebiko ,  Atsuhiko Yamamoto ,  Yasushi Tateshita ,  Hiromi Okazaki

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14629 ,  H01L27/1463

Abstract: A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.

Abstract translation: 一种固态图像拾取装置，包括：多个像素; 沿着与所述多个像素相邻的边界线设置的分离结构; 分离结构包括从半导体衬底的背面设置到与波长相对应的深度的槽，沿着边界线定位的槽，设置在槽中的第一分离层，以及设置在第一 分离层，对应于边界线，第二分离层连接到第一分离层; 和包括它们的方法。

公开(公告)号：US20150035029A1

公开(公告)日：2015-02-05

申请号：US14338851

申请日：2014-07-23

Applicant: Sony Corporation

Inventor： Harumi Ikeda ,  Atsuhiko Yamamoto ,  Yoshiki Ebiko ,  Takeshi Yanagita

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.

Abstract translation: 一种成像装置包括：光电二极管，被配置为执行光电转换并根据接收的光量产生电荷; 浮置扩散部，被配置为累积在所述光电二极管中产生的电荷; 读取电路，被配置为输出具有根据在浮动扩散部中累积的电荷的电平的电压的像素信号，所述读取电路包括一个或多个晶体管，每个晶体管具有电连接到所使用的布线的栅极 用于选择像素; 以及绝缘部分，其延伸到所述浮动扩散部分的底表面的一部分或全部，所述一个或多个晶体管中的源极 - 漏极区域的底表面的一部分或全部，或两者都相同。 光电二极管，浮动扩散部分，读取电路和绝缘部分设置在半导体层中。

公开(公告)号：US10855893B2

公开(公告)日：2020-12-01

申请号：US16740060

申请日：2020-01-10

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture.The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10748949B2

公开(公告)日：2020-08-18

申请号：US16265634

申请日：2019-02-01

Applicant: SONY CORPORATION

Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

IPC: H01L27/146

Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

公开(公告)号：US20150221692A1

公开(公告)日：2015-08-06

申请号：US14417590

申请日：2013-07-25

Applicant: SONY CORPORATION

Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

Abstract translation: 提供了一种固态成像装置，用于制造固态成像装置和电子装置的方法。 固态成像装置包括在基板中形成有多个像素的基板。 此外，在基板中形成多个组，特别是在相邻像素之间的像素隔离区域中形成多个组。 凹槽从衬底的第一表面延伸到衬底的第二表面。 嵌入的膜延伸到凹槽中。 至少一些凹槽包括靠近衬底的第一表面的第一阶段和由衬底的壁限定的第二衬底的第二表面，其中第一阶段比第二阶段宽，其中 在第一和第二阶段之间存在一个步骤。 此外，该器件包括与衬底的第一表面相邻的遮光膜，其覆盖在沟槽上。 遮光膜的一部分嵌入到延伸到凹槽中的嵌入膜中。