公开(公告)号：US10855893B2

公开(公告)日：2020-12-01

申请号：US16740060

申请日：2020-01-10

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture.The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10529760B2

公开(公告)日：2020-01-07

申请号：US15719097

申请日：2017-09-28

Applicant: Sony Corporation

Inventor： Susumu Hiyama ,  Kazufumi Watanabe

IPC: H01L27/146

Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US20170243904A1

公开(公告)日：2017-08-24

申请号：US15591255

申请日：2017-05-10

Applicant: Sony Corporation

Inventor： Susumu Hiyama ,  Kazufumi Watanabe

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US09601539B2

公开(公告)日：2017-03-21

申请号：US15084906

申请日：2016-03-30

Applicant: Sony Corporation

Inventor： Susumu Hiyama ,  Kazufumi Watanabe

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

公开(公告)号：US20150091122A1

公开(公告)日：2015-04-02

申请号：US14401396

申请日：2013-05-16

Applicant: SONY CORPORATION

Inventor： Hiromi Okazaki ,  Masayuki Uchiyama ,  Kazufumi Watanabe

IPC: H01L27/146

CPC classification number: H01L27/1463

Abstract: Systems and methods for providing a solid state image sensor (30) are provided. More particularly, an image sensor (30) that suppresses color mixing is provided. Moreover, embodiments of the present disclosure provide for the creation of light blocking features (32) that avoid the creation of stress concentrations. More particularly, embodiments of the present disclosure provide for the creation of light blocking structures (32) using trenches formed in a substrate (44) that are arranged such that no two trenches intersect one another.

Abstract translation: 提供了用于提供固态图像传感器（30）的系统和方法。 更具体地，提供抑制混色的图像传感器（30）。 此外，本公开的实施例提供了避免产生应力集中的遮光特征（32）的产生。 更具体地，本公开的实施例提供了使用形成在衬底（44）中的沟槽来形成遮光结构（32），其被布置成使得没有两个沟槽彼此相交。

公开(公告)号：US11277578B2

公开(公告)日：2022-03-15

申请号：US17088133

申请日：2020-11-03

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US11264423B2

公开(公告)日：2022-03-01

申请号：US16178454

申请日：2018-11-01

Applicant: Sony Corporation

Inventor： Kazufumi Watanabe ,  Yasushi Maruyama

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/18 ,  H01L21/78 ,  H04N5/359

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

公开(公告)号：US11076078B2

公开(公告)日：2021-07-27

申请号：US16885734

申请日：2020-05-28

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H04N5/369 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09912890B2

公开(公告)日：2018-03-06

申请号：US14778548

申请日：2014-03-12

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Kazufumi Watanabe ,  Kyohei Mizuta ,  Keishi Inoue ,  Hirohisa Uchida

IPC: H04N5/374 ,  H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

公开(公告)号：US09799698B2

公开(公告)日：2017-10-24

申请号：US15394241

申请日：2016-12-29

Applicant: Sony Corporation

Inventor： Kazufumi Watanabe ,  Yasushi Maruyama

IPC: H01L27/146 ,  H04N5/359 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L27/14645 ,  H01L21/7806 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0216 ,  H01L31/02162 ,  H01L31/18 ,  H01L31/1804 ,  H04N5/359 ,  Y02P70/521

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.