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    Solid state image device having an impurity concentration at a p/n interface of one photodiode being equal to or greater than at p/n interface of another photodiode within a semiconductor substrate
    1.
    发明授权
    Solid state image device having an impurity concentration at a p/n interface of one photodiode being equal to or greater than at p/n interface of another photodiode within a semiconductor substrate 有权

    公开(公告)号：US11315968B2

    公开(公告)日：2022-04-26

    申请号：US15426691

    申请日：2017-02-07

    Applicant: SONY CORPORATION

    Inventor： Hideo Kido ,  Takayuki Enomoto ,  Hideaki Togashi

    IPC: H01L27/146 ,  H04N5/378

    Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.

    Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
    2.
    发明授权
    Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device 有权

    公开(公告)号：US10418404B2

    公开(公告)日：2019-09-17

    申请号：US16130666

    申请日：2018-09-13

    Applicant: SONY CORPORATION

    Inventor： Takeshi Yanagita ,  Itaru Oshiyama ,  Takayuki Enomoto ,  Harumi Ikeda ,  Shinichiro Izawa ,  Atsuhiko Yamamoto ,  Kazunobu Ota

    IPC: H01L27/146

    Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

    Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus
    5.
    发明授权
    Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US10748949B2

    公开(公告)日：2020-08-18

    申请号：US16265634

    申请日：2019-02-01

    Applicant: SONY CORPORATION

    Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

    IPC: H01L27/146

    Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
    固态成像装置，用于制造固态成像装置和电子装置的方法

    公开(公告)号：US20150221692A1

    公开(公告)日：2015-08-06

    申请号：US14417590

    申请日：2013-07-25

    Applicant: SONY CORPORATION

    Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

    Abstract translation: 提供了一种固态成像装置，用于制造固态成像装置和电子装置的方法。 固态成像装置包括在基板中形成有多个像素的基板。 此外，在基板中形成多个组，特别是在相邻像素之间的像素隔离区域中形成多个组。 凹槽从衬底的第一表面延伸到衬底的第二表面。 嵌入的膜延伸到凹槽中。 至少一些凹槽包括靠近衬底的第一表面的第一阶段和由衬底的壁限定的第二衬底的第二表面，其中第一阶段比第二阶段宽，其中 在第一和第二阶段之间存在一个步骤。 此外，该器件包括与衬底的第一表面相邻的遮光膜，其覆盖在沟槽上。 遮光膜的一部分嵌入到延伸到凹槽中的嵌入膜中。

    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
    9.
    发明申请
    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190172858A1

    公开(公告)日：2019-06-06

    申请号：US16262518

    申请日：2019-01-30

    Applicant: Sony Corporation

    Inventor： Takayuki Enomoto

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.

    Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus
    10.
    发明授权
    Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US10229947B2

    公开(公告)日：2019-03-12

    申请号：US15656873

    申请日：2017-07-21

    Applicant: SONY CORPORATION

    Inventor： Takayuki Enomoto ,  Yoshiki Ebiko

    IPC: H01L27/146

    Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

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