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    Manufacturing method of semiconductor device
    2.
    发明授权
    Manufacturing method of semiconductor device 有权

    公开(公告)号：US10957534B2

    公开(公告)日：2021-03-23

    申请号：US16657649

    申请日：2019-10-18

    申请人： SK hynix Inc.

    发明人： Sun Young Kim ,  Nam Jae Lee

    IPC分类号： H01L21/02 ,  H01L21/82 ,  H01L27/06

    摘要： A method of manufacturing a semiconductor device includes forming a first sacrificial layer including a nitride over a first source layer, forming a second sacrificial layer including aluminum oxide over the first sacrificial layer, forming a second source layer over the second sacrificial layer, forming a stacked structure over the second source layer, forming a channel layer that passes through the stacked structure, the second source layer, the second sacrificial layer, and the first sacrificial layer, the channel layer being enclosed by a memory layer, forming a slit that passes through the stacked structure and the second source layer, forming a polysilicon spacer in the slit, forming an opening by removing the first sacrificial layer and the second sacrificial layer, exposing the channel layer by etching the memory layer, and forming a third source layer in the opening.

    Semiconductor device and manufacturing method of the semiconductor device
    5.
    发明授权
    Semiconductor device and manufacturing method of the semiconductor device 有权

    公开(公告)号：US11437399B2

    公开(公告)日：2022-09-06

    申请号：US16992889

    申请日：2020-08-13

    申请人： SK hynix Inc.

    发明人： Changhan Kim ,  In Ku Kang ,  Sun Young Kim

    IPC分类号： H01L27/11582 ,  H01L27/24 ,  H01L27/11556

    摘要： A semiconductor device includes a stacked structure including insulating layers and conductive layers alternately stacked on each other, a hard mask pattern located on the stacked structure, a channel structure passing through the hard mask pattern and the stacked structure, insulating patterns interposed between the insulating layers and the channel structure and each including a first surface and a second surface, wherein the first surface faces each of the insulating layers and is flat and the second surface faces the channel structure and includes a curved surface, and a memory layer interposed between the stacked structure and the channel structure and filling a space between the insulating patterns, wherein a sidewall of each of the conductive layers is located on an extending line of a sidewall of the hard mask pattern and the insulating patterns protrude farther towards the channel structure than the sidewall of the hard mask pattern.

    Stacked memory structure with insulating patterns
    8.
    发明授权
    Stacked memory structure with insulating patterns 有权

    公开(公告)号：US11637124B2

    公开(公告)日：2023-04-25

    申请号：US16992926

    申请日：2020-08-13

    申请人： SK hynix Inc.

    发明人： Changhan Kim ,  In Ku Kang ,  Sun Young Kim

    IPC分类号： H01L29/423 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/24 ,  H01L27/1157 ,  H01L27/11524 ,  H01L45/00 ,  H01L21/28

    摘要： A semiconductor device includes a stacked structure with insulating layers and conductive layers that are alternately stacked on each other, a hard mask pattern on the stacked structure, a channel structure penetrating the hard mask pattern and the stacked structure, insulating patterns interposed between the insulating layers and the channel structure, wherein the insulating patterns protrude farther towards the channel structure than a sidewall of the hard mask pattern, and a memory layer interposed between the stacked structure and the channel structure, wherein the memory layer fills a space between the insulating patterns.

    Semiconductor device and manufacturing method of semiconductor device
    9.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权

    公开(公告)号：US11430810B2

    公开(公告)日：2022-08-30

    申请号：US16992960

    申请日：2020-08-13

    申请人： SK hynix Inc.

    发明人： Changhan Kim ,  In Ku Kang ,  Sun Young Kim

    IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/24 ,  H01L27/1157 ,  H01L27/11524 ,  H01L29/423 ,  H01L45/00 ,  H01L21/28

    摘要： A semiconductor device includes a stacked structure with insulating layers and conductive layers that are alternately stacked on each other, a hard mask pattern located on the stacked structure, a channel structure penetrating the hard mask pattern and the stacked structure, insulating patterns interposed between the insulating layers and the channel structure, and a memory layer interposed between the stacked structure and the channel structure, wherein the memory layer fills a space between the insulating patterns, wherein a sidewall of each of the conductive layers protrudes farther towards the channel structure than a sidewall of the hard mask pattern, and wherein the insulating patterns protrude farther towards the channel structure than the sidewall of each of the conductive layers.