公开(公告)号：US09691632B2

公开(公告)日：2017-06-27

申请号：US14649114

申请日：2013-12-03

申请人： SILTRONIC AG ,  INTEL CORPORATION

发明人： Peter Storck ,  Norbert Werner ,  Martin Vorderwestner ,  Peter Tolchinsky ,  Irwin Yablok

IPC分类号： H01L21/322 ,  H01L29/167 ,  H01L21/02

CPC分类号： H01L21/3225 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/3221 ,  H01L29/167

摘要： An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

公开(公告)号：US09923050B2

公开(公告)日：2018-03-20

申请号：US15023553

申请日：2014-09-11

申请人： Siltronic AG ,  IMEC VZW

发明人： Sarad Bahadur Thapa ,  Ming Zhao ,  Peter Storck ,  Norbert Werner

IPC分类号： H01L29/04 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/045 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/205

摘要： A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing an AlN nucleation layer covering the top surface of the silicon single crystal substrate, wherein the top surface of the silicon single crystal substrate has a crystal lattice orientation which is off-oriented with respect to the {111}-plane, the normal to the top surface being inclined with respect to the -direction toward the -direction by an angle θ of not less than 0.3° and not more than 6°, the azimuthal tolerance of the inclination being ±0.1°; and an AlGaN buffer layer which covers the AlN nucleation layer and contains one or more AlxGa1-xN layers, wherein 0

公开(公告)号：US20230326750A1

公开(公告)日：2023-10-12

申请号：US18022177

申请日：2021-08-18

申请人： Siltronic AG

发明人： Lucas Becker ,  Peter Storck

IPC分类号： H01L21/02 ,  C23C16/06 ,  C23C16/04 ,  C23C16/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/52

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02639 ,  C23C16/06 ,  C23C16/042 ,  C23C16/029 ,  C30B25/04 ,  C30B25/18 ,  C30B29/52

摘要： A method heteroepitaxially deposits a silicon germanium layer on a substrate. The silicon germanium layer has a composition Si1-xGex, where 0.01≤x≤1. The substrate is a silicon single crystal wafer or a silicon-on-insulator wafer. The method includes: providing a mask layer atop the substrate; removing the mask layer in an edge region of the substrate to provide access to an annular-shaped free surface of the substrate in the edge region of the substrate surrounding a remainder of the mask layer; depositing an edge reservoir consisting of a relaxed or partially relaxed silicon germanium layer atop the annular-shaped free surface of the substrate; removing the remainder of the mask layer; and depositing the silicon germanium layer atop the substrate and atop the edge reservoir, the silicon germanium layer contacting an inner lateral surface of the edge reservoir.