公开(公告)号：US20240124974A1

公开(公告)日：2024-04-18

申请号：US18288845

申请日：2022-03-30

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  WAKAYAMA UNIVERSITY

Inventor： Takenori WATABE ,  Hiroshi HASHIGAMI ,  Takahiro SAKATSUME ,  Kazuyuki UNO ,  Marika OHTA

IPC: C23C16/448 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/4486 ,  C23C16/40 ,  C23C16/403 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/0262

Abstract: A method of producing a raw material solution for a film-forming according to a Mist CVD method including a temperature at which a solute containing a metallic element is mixed with a solvent and stirred is 30° C. or higher, and a method of film-forming according to the Mist CVD method using a raw material solution produced by the method of producing the raw material solution.

公开(公告)号：US20230420581A1

公开(公告)日：2023-12-28

申请号：US18219450

申请日：2023-07-07

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takenori WATABE ,  Hiroshi HASHIGAMI ,  Hiroyuki OHTSUKA

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0236

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/068 ,  Y02P70/50 ,  H01L31/0682 ,  H01L31/02363 ,  Y02E10/50 ,  H01L31/022441

Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming an emitter layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the emitter layer; removing the diffusion mask in a pattern; forming a base layer on the portion where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

公开(公告)号：US20230223446A1

公开(公告)日：2023-07-13

申请号：US18121680

申请日：2023-03-15

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hiroshi HASHIGAMI

IPC: H01L29/22 ,  H01L21/02

CPC classification number: H01L29/2206 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02496 ,  H01L21/0262 ,  H01L29/7395

Abstract: A laminate contains a crystal substrate; a middle layer formed on a main surface of the crystal substrate, the middle layer comprising a mixture of an amorphous region in an amorphous phase and a crystal region in a crystal phase having a corundum structure mainly made of a first metal oxide; and a crystal layer formed on the middle layer and having a corundum structure mainly made of a second metal oxide, wherein the crystal region is an epitaxially grown layer from a crystal plane of the crystal substrate.

公开(公告)号：US20200052136A1

公开(公告)日：2020-02-13

申请号：US16342557

申请日：2016-10-25

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takenori WATABE ,  Shun MORIYAMA ,  Hiroshi HASHIGAMI ,  Hiroyuki OHTSUKA

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/068

Abstract: A solar cell having, on a semiconductor substrate's first main surface a first conductivity type, a base layer having first conductivity type and an emitter layer which is adjacent to base layer and has a second conductivity type which is a conductivity type opposite to first conductivity type, the solar cell includes: a base electrode which is electrically connected with base layer; and an emitter electrode which is electrically connected with emitter layer, solar cell including: dielectric films which are in contact with base and emitter layer on first main surface; first insulator films which cover the emitter electrode, are placed on the dielectric films, and are arranged to have a gap at least on base layer; and a base bus bar electrode placed at least on first insulator films, and being wherein gap distance between the first insulator films is 40 μm or more and (W+110) μm or less.

公开(公告)号：US20190252561A1

公开(公告)日：2019-08-15

申请号：US16068045

申请日：2016-12-01

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takenori WATABE ,  Yoko MATSUO ,  Hiroshi HASHIGAMI ,  Hiroyuki OHTSUKA

IPC: H01L31/0224 ,  H01L31/048 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/0481 ,  H01L31/18 ,  Y02E10/549 ,  Y02P70/521

Abstract: A solar battery cell including a finger electrode on a first main surface of a semiconductor substrate, the solar battery cell being including at least a surface of the finger electrode is covered with a material containing an insulating material so that the surface is not exposed, and the material containing the insulating material does not hydrolyze or does not generate a carboxylic acid when it hydrolyzes. Consequently, it is possible to provide a solar battery cell which suppresses a reduction in photoelectric conversion efficiency with time even though EVA is used and to provide a photovoltaic module using this solar battery cell.

公开(公告)号：US20240234140A1

公开(公告)日：2024-07-11

申请号：US18693599

申请日：2022-06-29

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  SHIN-ETSU ENGINEERING CO., LTD.

Inventor： Hiroshi HASHIGAMI ,  Muneyuki KOJIMA

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC classification number: H01L21/0262 ,  C23C16/40 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45512 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/02565

Abstract: A film forming apparatus including an atomizer configured to atomize a raw material solution to generate a raw material mist, a carrier gas supplier configured to supply a carrier gas that carries the raw material mist, a mist supplier configured to supply a mixture gas in which the raw material mist and the carrier gas are mixed to a surface of a substrate, a stage configured to hold the substrate, a heater configured to heat the substrate, and an exhaust unit directly or indirectly connected to the stage through piping. Thus, a film forming apparatus that can form a crystalline semiconductor film with favorable crystal orientation stably and with high productivity, and a method of forming a crystalline semiconductor film are provided.

公开(公告)号：US20240229236A9

公开(公告)日：2024-07-11

申请号：US18279082

申请日：2022-03-10

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takahiro SAKATSUME ,  Hiroshi HASHIGAMI

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/458

CPC classification number: C23C16/455 ,  C23C16/08 ,  C23C16/4588

Abstract: A film formation device which forms a film on a substrate through the heat treatment of a starting material solution in the form of a mist, the film formation device including a mist conversion unit that generates a mist by converting the starting material solution into mist, a carrier gas supply unit that supplies a carrier gas for transporting the mist generated by the mist conversion unit, a film formation unit that includes therein a placement part for placing the substrate and that is where the mist transported by the carrier gas is supplied onto the substrate, and an exhaust unit that exhausts exhaust gas from the film formation unit, and further including, above the placement part in the film formation unit, a nozzle for supplying the mist onto the substrate and a top plate for adjusting the flow of the mist supplied from the nozzle.

公开(公告)号：US20230302482A1

公开(公告)日：2023-09-28

申请号：US18018746

申请日：2021-07-09

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hiroshi HASHIGAMI

IPC: B05B17/06 ,  B05B7/26 ,  B05D1/02

CPC classification number: B05B17/0676 ,  B05B7/262 ,  B05D1/02

Abstract: A film-forming atomizer atomizing a raw material liquid with ultrasonic wave to generate a raw material mist, includes: a raw material container containing the raw material liquid; a propagation vessel containing an intermediate liquid as a medium for propagating the ultrasonic wave to the raw material liquid; a support mechanism to support the raw material container so that at least a part of the raw material container is positioned in the intermediate liquid; a circulation mechanism to circulate the intermediate liquid; an ultrasonic wave generator to generate and apply the ultrasonic wave to the propagation vessel; and a degassing mechanism to discharge a gas in the intermediate liquid out of the film-forming atomizer.

公开(公告)号：US20230245883A1

公开(公告)日：2023-08-03

申请号：US18018913

申请日：2021-06-18

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hiroshi HASHIGAMI

IPC: H01L21/02 ,  C23C16/40 ,  C30B29/16 ,  C30B25/04 ,  H01L29/872

CPC classification number: H01L21/0242 ,  C23C16/40 ,  C30B29/16 ,  C30B25/04 ,  H01L29/872

Abstract: A semiconductor laminate at least including: a base; a buffer layer; and a crystalline metal oxide semiconductor film containing at least one metal element and having a corundum structure, the semiconductor laminate having the buffer layer on a main surface of the base directly or via another layer, the semiconductor laminate having the crystalline metal oxide semiconductor film on the buffer layer. The buffer layer is a laminate structure of a plurality of buffer films each with a different composition, and at least two buffer films of the plurality of buffer films have a film thickness of 200 nm or more and 650 nm or less.

公开(公告)号：US20220411926A1

公开(公告)日：2022-12-29

申请号：US17801488

申请日：2021-02-18

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATION

Inventor： Hiroshi HASHIGAMI ,  Toshiyuki KAWAHARAMURA

IPC: C23C16/448 ,  C23C16/40 ,  H01L29/24 ,  H01L21/02

Abstract: An atomizing apparatus for film formation, including: a raw-material container configured to accommodate a raw-material solution; a cylindrical member configured to spatially connect inside of the container to an outer unit, and disposed so a lower end of the cylindrical member does not touch a liquid surface of the solution in the container; an ultrasound generator having at least one ultrasound generation source; and a liquid tank where the ultrasound propagates to the raw-material solution through a middle solution. A center line of an ultrasound-emitting surface of the ultrasound generation source is designated u, the source is provided so an intersection P between line u and a plane containing a side wall surface of the cylindrical member and an extension thereof is located below a lower end point B of the cylindrical member. This provides an atomizing apparatus for film formation, enabling high-quality thin film formation with suppressed particle adhesion.