公开(公告)号：US10910407B2

公开(公告)日：2021-02-02

申请号：US16478244

申请日：2018-01-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando ,  Takashi Hamada ,  Yasumasa Yamane

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786

摘要： A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.

公开(公告)号：US10096720B2

公开(公告)日：2018-10-09

申请号：US15464517

申请日：2017-03-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66

摘要： To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.

公开(公告)号：US09627418B2

公开(公告)日：2017-04-18

申请号：US14579249

申请日：2014-12-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshinori Ando

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

公开(公告)号：US10475818B2

公开(公告)日：2019-11-12

申请号：US15494850

申请日：2017-04-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando ,  Shinpei Matsuda ,  Yuki Hata

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L27/105 ,  H01L29/423

摘要： A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

公开(公告)号：US10186604B2

公开(公告)日：2019-01-22

申请号：US15722055

申请日：2017-10-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L21/822 ,  H01L27/06 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/088

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US10020322B2

公开(公告)日：2018-07-10

申请号：US15390894

申请日：2016-12-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo Ito ,  Takahisa Ishiyama ,  Katsuaki Tochibayashi ,  Yoshinori Ando ,  Yasutaka Suzuki ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Shunpei Yamazaki

IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2224/05 ,  H01L2224/48463

摘要： A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US20150108475A1

公开(公告)日：2015-04-23

申请号：US14520196

申请日：2014-10-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/477 ,  H01L29/786

CPC分类号： H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

摘要翻译： 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。

公开(公告)号：US10002886B2

公开(公告)日：2018-06-19

申请号：US15485371

申请日：2017-04-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshinori Ando

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

公开(公告)号：US09780201B2

公开(公告)日：2017-10-03

申请号：US15223002

申请日：2016-07-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  C23C14/08 ,  C23C14/35 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/822 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US09431435B2

公开(公告)日：2016-08-30

申请号：US14520196

申请日：2014-10-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L29/66 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

摘要翻译： 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。