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公开(公告)号:US20240006674A1
公开(公告)日:2024-01-04
申请号:US18265116
申请日:2021-12-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takeshi OSADA , Takayuki IKEDA , Yosuke TSUKAMOTO , Hiroki INOUE , Kiyotaka KIMURA , Shunsuke SATO , Toshiki MIZUGUCHI
IPC: H01M10/48 , H01M10/42 , G01R31/367
CPC classification number: H01M10/48 , H01M10/425 , G01R31/367 , H01M2010/4278
Abstract: A sensor capable of detecting local expansion or the like is provided, and a storage battery system including a safety system such as the sensor and a secondary battery is provided. The storage battery system includes a first secondary battery and a second secondary battery each including an exterior body holding an electrolyte solution, a positive electrode, and a negative electrode; a sensor member provided to be in contact with part of the exterior body; and a detection circuit controlling the sensor member. The first secondary battery includes a memory unit storing data collected with gas introduction into the second secondary battery, a learning model constructed on the basis of the data, and an estimated value obtained using the learning model; and a unit providing information based on the estimated value.
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公开(公告)号:US20230144505A1
公开(公告)日:2023-05-11
申请号:US17795260
申请日:2021-02-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yusuke NEGORO , Seiichi YONEDA , Hiroki INOUE , Shunsuke SATO , Shunpei YAMAZAKI
CPC classification number: H10K30/81 , H10K30/353 , H10K30/60
Abstract: A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.
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公开(公告)号:US20230156376A1
公开(公告)日:2023-05-18
申请号:US17995803
申请日:2021-04-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Seiichi YONEDA , Yusuke NEGORO , Takeya HIROSE , Shunsuke SATO , Shunpei YAMAZAKI
IPC: H04N25/78 , H04N25/771 , H04N25/79 , H10K39/32
CPC classification number: H04N25/78 , H04N25/771 , H04N25/79 , H10K39/32
Abstract: An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device has an additional function such as image processing, and can retain analog data obtained by an image capturing operation in pixels and extract data obtained by multiplying the analog data by a given weight coefficient. In the imaging device, the data is stored in a memory cell and pooling processing of data stored in a plurality of memory cells can be performed. The pixels are provided so as to have a region overlapping with at least one of the memory cells, a pooling processing circuit, and a reading circuit of the pixels; thus, an increase in the area of the imaging device can be inhibited even with an additional function.
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公开(公告)号:US20230408595A1
公开(公告)日:2023-12-21
申请号:US18035992
申请日:2021-11-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takayuki IKEDA , Yosuke TSUKAMOTO , Takeshi OSADA , Hiroki INOUE , Kiyotaka KIMURA , Shunsuke SATO , Toshiki MIZUGUCHI
IPC: G01R31/389 , H01M10/48 , H01M10/42
CPC classification number: G01R31/389 , H01M10/486 , H01M10/4264 , H01M10/48
Abstract: Provided is a power storage system, a secondary battery control system, a secondary battery measurement circuit, or the like that consumes low power. Provided is a power storage system, a secondary battery control system, a secondary battery measurement circuit, or the like that is highly integrated. The power storage system includes a secondary battery and a measurement circuit; the measurement circuit includes a resistor, a capacitor, and an inductor; one terminal of the resistor is electrically connected to one electrode of the capacitor; the other terminal of the resistor is electrically connected to one terminal of the inductor; one terminal of the inductor is electrically connected to a positive electrode of the secondary battery; and the measurement circuit has a function of measuring impedance of the secondary battery by measuring current of the resistor.
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公开(公告)号:US20230179888A1
公开(公告)日:2023-06-08
申请号:US18008302
申请日:2021-07-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunsuke SATO , Seiichi YONEDA , Yusuke NEGORO , Takeya HIROSE , Shunpei YAMAZAKI
IPC: H04N25/77
CPC classification number: H04N25/77
Abstract: An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.
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