SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

    公开(公告)号:US20240253093A1

    公开(公告)日:2024-08-01

    申请号:US18425969

    申请日:2024-01-29

    IPC分类号: B08B15/02 B08B7/00 H01L21/67

    摘要: A substrate processing apparatus and a substrate processing system according to the invention includes a processing chamber having a processing space capable of accommodating a substrate inside, being provided with an aperture on a side surface thereof, which communicates with the processing space to cause the substrate to pass therethrough, and being disposed under a downflow environment, a lid part which closes and opens the aperture, a fluid supplier which supplies a heated processing fluid to be used for processing the substrate to the processing space closed by the lid part, and a regulator which guides at least part of an air flowing as the downflow to around the processing chamber and generates an airflow having a uniform flow velocity along an outer surface of the processing chamber.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240157390A1

    公开(公告)日:2024-05-16

    申请号:US18509106

    申请日:2023-11-14

    IPC分类号: B05C5/02 B05D1/26

    CPC分类号: B05C5/02 B05D1/26

    摘要: In the substrate processing apparatus, a support tray supporting a substrate is housed in an internal space of a chamber. A processing fluid is supplied into the internal space from one end side of the internal space. The support tray includes a tray member and a plurality of support members attached to the tray member in such a manner as to surround a substrate facing surface. The tray member has a downstream-side standing portion that has a downstream-side standing portion that stands upward further than the substrate facing surface while located in proximity to a peripheral surface of the substrate on a downstream side supported by the plurality of support members. An upper surface of the downstream-side standing portion is below the upper surface of the substrate in a vertical direction supported by the plurality of support members.

    SUBSTRATE PROCESSING APPARATUS
    3.
    发明申请

    公开(公告)号:US20220165599A1

    公开(公告)日:2022-05-26

    申请号:US17440220

    申请日:2020-02-26

    IPC分类号: H01L21/677 B08B3/08 F26B5/00

    摘要: In a substrate processing apparatus in which a substrate is transported into multiple chambers by using multiple transport mechanisms, while a first transport unit is responsible for the transport of the substrate into the first chamber and the transport of the substrate out from the second chamber, the second transport unit is responsible for the transfer of the substrate from the first chamber to the second chamber. With respect to a transfer zone which is a transport route of the substrate from the first chamber to the second chamber, the first transport unit is arranged above and the second transport unit is arranged below. Since entry into the transfer zone is exclusively allowed, the two transport units can operate individually while avoiding mutual interference.

    SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请

    公开(公告)号:US20210313199A1

    公开(公告)日:2021-10-07

    申请号:US17219933

    申请日:2021-04-01

    IPC分类号: H01L21/67 B08B7/00

    摘要: A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

    公开(公告)号:US20210242058A1

    公开(公告)日:2021-08-05

    申请号:US17152833

    申请日:2021-01-20

    发明人: Noritake SUMI

    IPC分类号: H01L21/677 H01L21/673

    摘要: A substrate processing system includes a processing container body having an opening, a lid which closes an opening, a mover for relatively moving the lid with respect to the opening to open and close the opening, and a lock mechanism which locks the lid to the processing container body. The lock mechanism includes an arm member and a locking member. The arm member is provided on one of the processing container body and the lid and extends toward the other when the processing container body is located at a position where the lid is separated from the processing container body. The locking member restricts a displacement of the arm member by being engaged with a part of the arm member. This part is located beyond the gap space when the lid is at the separated position.

    REPLACEMENT END TIME DETERMINATION METHOD, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20240255404A1

    公开(公告)日:2024-08-01

    申请号:US18421871

    申请日:2024-01-24

    发明人: Noritake SUMI

    IPC分类号: G01N9/36 G06Q10/20

    CPC分类号: G01N9/36 G06Q10/20

    摘要: In a replacement end time determination method in accordance with the present invention, in a dry state where a liquid to be replaced is not present in a chamber, a processing fluid is supplied and discharged in accordance with a predetermined supply/discharge recipe, and while the processing fluid is maintained in a supercritical state, a density profile is acquired to be used as a reference profile. A difference between the density profile acquired in a wet state where the liquid to be replaced is present in the chamber and the reference profile is accumulated, and on the basis of a comparison between the accumulated value and a threshold value set for the accumulated value, a replacement end time is determined.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20240170275A1

    公开(公告)日:2024-05-23

    申请号:US18551539

    申请日:2022-03-16

    发明人: Noritake SUMI

    IPC分类号: H01L21/02 B08B7/00 H01L21/67

    摘要: In a substrate processing method according to this invention, a decompression process after processing a substrate using a fluid in a supercritical state in a chamber is divided into two stages. In the first decompress step, an internal space of the chamber is decompressed to a pressure lower than the critical pressure and higher than an atmospheric pressure while keeping the temperature of the internal space equal to or higher than a critical temperature of the processing fluid. In the second decompression step, the processing fluid is discharged at a discharge rate higher than in the first decompression step, thereby the internal space is decompressed. At this time, the discharge rate is so controlled that the temperature of the internal space when the pressure of the internal space is reduced to the atmospheric pressure becomes a predetermined target temperature.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM

    公开(公告)号:US20240162054A1

    公开(公告)日:2024-05-16

    申请号:US18508972

    申请日:2023-11-14

    发明人: Noritake SUMI

    摘要: A substrate processing method in accordance with the present invention includes forming a liquid film on an upper surface of a substrate by a wet processing apparatus; carrying the substrate having the liquid film formed thereon into a chamber of a supercritical processing apparatus by a conveyor device; and processing a substrate by a processing fluid in a supercritical state in the chamber by the supercritical processing apparatus. The method further includes blowing a gas toward a lower surface of the substrate supported in a horizontal posture by a gas discharger for at least a part of a period after the formation of the liquid film on the substrate during which the substrate is outside the chamber.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20230066729A1

    公开(公告)日:2023-03-02

    申请号:US17894148

    申请日:2022-08-23

    摘要: This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

    SUBSTRATE PROCESSING APPARATUS
    10.
    发明申请

    公开(公告)号:US20210313198A1

    公开(公告)日:2021-10-07

    申请号:US17219931

    申请日:2021-04-01

    发明人: Noritake SUMI

    IPC分类号: H01L21/67 H01L21/677 F26B5/00

    摘要: An upper flow passage 181 is connected to a buffer space 182. The upper flow passage 181 has a constant cross-sectional shape and a processing fluid flows as a laminar flow in the upper flow passage 181. On the other hand, the buffer space 182 has a larger flow passage cross-sectional area than the upper flow passage 181. Thus, the processing fluid flowing in the upper flow passage 181 is released at once into the wide buffer space 182, whereby the pressure of the processing fluid decreases. A backflow of the processing fluid from the buffer space 182 to the upper flow passage 181 is prevented due to this pressure difference and the magnitude of a flow passage resistance of the upper flow passage 181 viewed from the buffer space 182.