Substrate processing apparatus and substrate processing method

    公开(公告)号:US11996302B2

    公开(公告)日:2024-05-28

    申请号:US17698466

    申请日:2022-03-18

    IPC分类号: G05D7/06 H01L21/67

    CPC分类号: H01L21/67023 G05D7/0652

    摘要: A substrate processing apparatus 100 includes a processing unit, a reservoir 31, a processing liquid pipe 32, a pump 34, a filter 35, a first flow rate section 36, a first return pipe 51, a first adjustment valve 52, a second return pipe 41, a branch supply pipe 16, a second flow rate section 42, and a controller. The first flow rate section 36 is placed in the processing liquid pipe 32 and measures a flow rate or pressure of the processing liquid flowing through the processing liquid pipe 32. The first adjustment valve 52 is placed in the first return pipe 51 and adjusts a flow rate of the processing liquid flowing through the first return pipe 51. The controller controls an opening degree of the first adjustment valve 52 based on the flow rate or the pressure of the processing liquid measured by the first flow rate section 36.

    Substrate processing apparatus
    2.
    发明授权

    公开(公告)号:US10297476B2

    公开(公告)日:2019-05-21

    申请号:US15051034

    申请日:2016-02-23

    IPC分类号: H01L21/67

    摘要: A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. A return flow passage is connected to the upstream flow passage. A downstream heater heats liquid flowing through the upstream flow passage. A downstream switching unit supplies the liquid, supplied to the plurality of upstream flow passages from the supply flow passage, to one of the plurality of discharge ports and the return flow passage, selectively.

    Substrate processing apparatus
    3.
    发明授权

    公开(公告)号:US11075095B2

    公开(公告)日:2021-07-27

    申请号:US16406419

    申请日:2019-05-08

    IPC分类号: H01L21/67

    摘要: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

    Substrate processing apparatus
    4.
    发明授权

    公开(公告)号:US10403517B2

    公开(公告)日:2019-09-03

    申请号:US15044452

    申请日:2016-02-16

    IPC分类号: H01L21/67

    摘要: A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. Hydrogen peroxide water, that is one of components of a chemical liquid (SPM), is supplied to the upstream flow passage from a component liquid flow passage. A mixing ratio changing unit including a plurality of first flow control valves and a plurality of second flow control valves independently changes mixing ratios of sulfuric acid and hydrogen peroxide water included in the chemical liquid to be discharged from the plurality of discharge ports for each of the upstream flow passages.

    Substrate treating apparatus and method of treating substrate
    5.
    发明授权
    Substrate treating apparatus and method of treating substrate 有权
    底物处理装置及其处理方法

    公开(公告)号:US09460944B2

    公开(公告)日:2016-10-04

    申请号:US14746950

    申请日:2015-06-23

    摘要: A substrate treating apparatus includes a rotating and holding unit that rotates a substrate, a first supply source that supplies first pure water having a first temperature, a second supply source that supplies second pure water having a second temperature higher than the first temperature, a treatment solution supply unit that supplies a treatment solution to a central section of an upper surface of the substrate, a first supply unit that supplies a first liquid containing the first pure water to a central section of a lower surface of the substrate, a second supply unit that supplies a second liquid containing the second pure water to a peripheral section and an intermediate section of the lower surface, and a heat amount control unit that independently controls an amount of heat to be supplied by the first supply unit and an amount of heat to be supplied by the second supply unit.

    摘要翻译: 基板处理装置包括旋转基板的旋转保持单元,供给具有第一温度的第一纯水的第一供给源,供给具有比第一温度高的第二温度的第二纯水的第二供给源,处理 溶液供给单元,其将处理液供给到所述基板的上表面的中央部;第一供给单元,将含有所述第一纯水的第一液体供给到所述基板的下表面的中央部;第二供给单元, 其将含有第二纯水的第二液体供应到下表面的周边部分和中间部分;以及热量控制单元,其独立地控制由第一供应单元供应的热量和热量 由第二供应单元提供。

    Substrate processing apparatus and method of machining tubular guard

    公开(公告)号:US11819872B2

    公开(公告)日:2023-11-21

    申请号:US17584506

    申请日:2022-01-26

    IPC分类号: B05C11/08 B05C11/10 B05D1/00

    摘要: A substrate processing apparatus includes a rotational holding member that rotates a substrate around a predetermined rotational axis while holding the substrate, a liquid supply member that supplies a liquid to the substrate held by the rotational holding member, and a resin-made tubular guard that surrounds the substrate held by the rotational holding member. The tubular guard has an inner peripheral surface and an uneven portion disposed at the inner peripheral surface. The uneven portion has a plurality of recessed portions and a plurality of protruding portions placed between the recessed portions adjacent to each other. The recessed portion has a width smaller than a diameter of a liquid droplet scattering from the substrate held by the rotational holding member and a depth in which the liquid droplet does not come into contact with a bottom portion of the recessed portion in a state in which the liquid droplet is in contact with the protruding portions. The protruding portion has a width that is smaller than the diameter of the liquid droplet and that is smaller than the width of the recessed portion.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US11640916B2

    公开(公告)日:2023-05-02

    申请号:US17443345

    申请日:2021-07-26

    摘要: A substrate processing apparatus includes an indexer block and a processing block adjacent to the indexer block in a lateral direction of the indexer block. A plurality of processing block layers are stacked in an up-down direction in the processing block. The indexer block includes a container holding portion and a first transfer robot that transfers a substrate between the substrate container held by the container holding portion and the processing block. Each of the processing block layers includes a plurality of processing units, a substrate placing portion, a dummy-substrate housing portion, and a second transfer robot that transfers a substrate between the substrate placing portion and the plurality of processing units and that transfers a dummy substrate between the dummy-substrate housing portion and the plurality of processing units.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US09793176B2

    公开(公告)日:2017-10-17

    申请号:US15183234

    申请日:2016-06-15

    IPC分类号: H01L21/67 H01L21/66

    摘要: The temperature of a chemical liquid supplied to a pot is detected while allowing a processing liquid discharge port to discharge the chemical liquid toward the pot at a pre-dispensing position. The temperature of the chemical liquid rises in response to the lapse of time. When the temperature of the chemical liquid supplied to the pot reaches a second target temperature, the processing liquid discharge port is allowed to stop the discharge of the chemical liquid. Thereafter, a positional relationship between the processing liquid discharge port and the pot is changed, and the processing liquid discharge port is allowed to discharge the chemical liquid toward the substrate at the processing position.

    Substrate treating apparatus
    9.
    发明授权

    公开(公告)号:US11810795B2

    公开(公告)日:2023-11-07

    申请号:US17182530

    申请日:2021-02-23

    IPC分类号: H01L21/67 H01L21/687

    摘要: Disclosed is a substrate treating apparatus. All treating units are each arranged such that a treatment chamber, a chemical piping space, and an exhaust chamber are located side by side along a transportation space, the chemical piping space is located on a first side of the treatment chamber, and the exhaust chamber faces the chemical piping space across the treatment chamber when seen from the transportation space. The exhaust chamber faces the chemical piping space across the treatment chamber, leading to prevention of obstruction of a passage for passing a pipe, configured to supply a chemical to a substrate held by a holding rotator, by an exhaust pipe. Moreover, a single type of treating units is enough for the substrate treating apparatus instead of two types of treating units currently used. This results in sharing of components by all the treating units.

    Substrate processing apparatus
    10.
    发明授权

    公开(公告)号:US11610790B2

    公开(公告)日:2023-03-21

    申请号:US17245079

    申请日:2021-04-30

    IPC分类号: H01L21/67

    摘要: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.