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公开(公告)号：US09305935B2
公开(公告)日：2016-04-05
申请号：US14631047
申请日：2015-02-25
发明人： Yao-Sheng Lee , Zhen Chen , Syo Fukata
IPC分类号： H01L27/115 , H01L29/66 , H01L27/108 , H01L21/768 , H01L29/792 , H01L23/48 , H01L27/11
CPC分类号： H01L27/11578 , H01L21/76816 , H01L21/76829 , H01L23/481 , H01L27/10802 , H01L27/11 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11548 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11575 , H01L27/11582 , H01L29/66 , H01L29/7926 , H01L2924/0002 , H01L2924/00
摘要： A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers.
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公开(公告)号：US20140367759A1
公开(公告)日：2014-12-18
申请号：US14470479
申请日：2014-08-27
发明人： Yao-Sheng Lee , Zhen Chen , Syo Fukata
CPC分类号： H01L27/11578 , H01L21/76816 , H01L21/76829 , H01L23/481 , H01L27/10802 , H01L27/11 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11548 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11575 , H01L27/11582 , H01L29/66 , H01L29/7926 , H01L2924/0002 , H01L2924/00
摘要： A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers.
摘要翻译： 制作多层次联系的方法。 该方法包括提供包括至少一个设备区域和至少一个接触区域的进程内多电平设备。 接触区域包括以台阶图案配置的多个导电层。 该方法还包括在多个导电层上形成共形蚀刻停止层，在蚀刻停止层上形成第一电绝缘层，在第一电绝缘层上形成共形牺牲层，并形成第二电绝缘层 牺牲层。 该方法还包括通过蚀刻停止层，接触区域中的第一电绝缘层，牺牲层和第二电绝缘层蚀刻到多个导电层的多个接触开口。
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公开(公告)号：US08994099B2
公开(公告)日：2015-03-31
申请号：US14470479
申请日：2014-08-27
发明人： Yao-Sheng Lee , Zhen Chen , Syo Fukata
IPC分类号： H01L29/66 , H01L23/48 , H01L21/768 , H01L27/115 , H01L29/792 , H01L27/11
CPC分类号： H01L27/11578 , H01L21/76816 , H01L21/76829 , H01L23/481 , H01L27/10802 , H01L27/11 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11548 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11575 , H01L27/11582 , H01L29/66 , H01L29/7926 , H01L2924/0002 , H01L2924/00
摘要： A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers.
摘要翻译： 制作多层次联系的方法。 该方法包括提供包括至少一个设备区域和至少一个接触区域的进程内多电平设备。 接触区域包括以台阶图案配置的多个导电层。 该方法还包括在多个导电层上形成共形蚀刻停止层，在蚀刻停止层上形成第一电绝缘层，在第一电绝缘层上形成共形牺牲层，并形成第二电绝缘层 牺牲层。 该方法还包括通过蚀刻停止层，接触区域中的第一电绝缘层，牺牲层和第二电绝缘层蚀刻到多个导电层的多个接触开口。
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公开(公告)号：US20150179663A1
公开(公告)日：2015-06-25
申请号：US14631047
申请日：2015-02-25
发明人： Yao-Sheng Lee , Zhen Chen , Syo Fukata
IPC分类号： H01L27/115
CPC分类号： H01L27/11578 , H01L21/76816 , H01L21/76829 , H01L23/481 , H01L27/10802 , H01L27/11 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11548 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11575 , H01L27/11582 , H01L29/66 , H01L29/7926 , H01L2924/0002 , H01L2924/00
摘要： A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers.
摘要翻译： 制作多层次联系的方法。 该方法包括提供包括至少一个设备区域和至少一个接触区域的进程内多电平设备。 接触区域包括以台阶图案配置的多个导电层。 该方法还包括在多个导电层上形成共形蚀刻停止层，在蚀刻停止层上形成第一电绝缘层，在第一电绝缘层上形成共形牺牲层，并形成第二电绝缘层 牺牲层。 该方法还包括通过蚀刻停止层，接触区域中的第一电绝缘层，牺牲层和第二电绝缘层蚀刻到多个导电层的多个接触开口。
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