公开(公告)号：US10089031B2

公开(公告)日：2018-10-02

申请号：US15019419

申请日：2016-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Seo ,  Yeong-Jae Woo ,  MoonSang Kwon ,  Sunmi Lee

IPC: G06F12/10 ,  G06F3/06 ,  G06F12/02

Abstract: Data storage is provided which includes a nonvolatile memory device including a plurality of memory blocks divided into a first region being an over provisioning region and a second region, and a storage controller allocating at least one memory block, corresponding to an unconcerned sector, from among memory blocks of the second region to the first region. It may be possible to adjust the number of reserved memory blocks in the over provisioning region.

公开(公告)号：US09223506B2

公开(公告)日：2015-12-29

申请号：US14511271

申请日：2014-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuvk-Sun Kwon

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

Abstract translation: 提供半导体存储装置及其节流方法。 半导体存储装置包括：非易失性存储装置，被配置为将数据存储在非易失性状态; 以及控制器，被配置为控制所述非易失性存储器件。 控制器计算新的性能水平，将计算的性能水平与预定参考值进行比较，并根据比较结果将计算出的性能水平确定为更新的性能水平。