Invention Grant
- Patent Title: Semiconductor storage device and method of throttling performance of the same
- Patent Title (中): 半导体存储装置及其节流方法的性能相同
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Application No.: US14511271Application Date: 2014-10-10
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Publication No.: US09223506B2Publication Date: 2015-12-29
- Inventor: Han Bin Yoon , Yeong-Jae Woo , Dong Gi Lee , Young Kug Moon , Hyuvk-Sun Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: EIPG, PLLC
- Priority: KR10-2010-0080697 20100820; KR10-2010-0080698 20100820; KR10-2010-0080699 20100820
- Main IPC: G06F3/06
- IPC: G06F3/06
Abstract:
A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.
Public/Granted literature
- US20150032948A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF THROTTLING PERFORMANCE OF THE SAME Public/Granted day:2015-01-29
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