公开(公告)号：US09223506B2

公开(公告)日：2015-12-29

申请号：US14511271

申请日：2014-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Bin Yoon ,  Yeong-Jae Woo ,  Dong Gi Lee ,  Young Kug Moon ,  Hyuvk-Sun Kwon

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2206/1014

Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

Abstract translation: 提供半导体存储装置及其节流方法。 半导体存储装置包括：非易失性存储装置，被配置为将数据存储在非易失性状态; 以及控制器，被配置为控制所述非易失性存储器件。 控制器计算新的性能水平，将计算的性能水平与预定参考值进行比较，并根据比较结果将计算出的性能水平确定为更新的性能水平。