公开(公告)号：US11424251B2

公开(公告)日：2022-08-23

申请号：US17219175

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounggon Kang ,  Taejun Yoo ,  Seunghyun Yang ,  Dalhee Lee

IPC: H01L27/11 ,  G11C11/41 ,  G11C11/412 ,  G11C11/417 ,  H01L23/528

Abstract: A semiconductor device is provided. The semiconductor device includes power supply lines extending in a first direction; first transistors, each of which is formed in a first region and has a first threshold voltage; and second transistors, each of which is formed in a second region and has a second threshold voltage higher than the first threshold voltage. One of the plurality of power supply lines is interposed between the first region and the second region, the first transistors implement a first portion of a multiplexer, a clock buffer and a first latch that are disposed on a data path, the second transistors implement a second portion of the multiplexer circuit and a second latch that are disposed on a feedback path, and the first portion of the multiplexer circuit and the second portion of the multiplexer circuit are disposed in a common location along the first direction.

公开(公告)号：US11790146B2

公开(公告)日：2023-10-17

申请号：US17324829

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeha Lee ,  Jintae Kim ,  Seunghyun Yang ,  Dongyeon Heo

IPC: G06F30/392 ,  G06F30/398 ,  G06F30/394

CPC classification number: G06F30/392 ,  G06F30/394 ,  G06F30/398

Abstract: A semiconductor device including a standard cell is provided. The standard cell includes an active region; a gate structure intersecting the active region; a first conductive structure including: a first power supply line and a second power supply line; and a second conductive structure disposed on the first conductive structure, the second conductive structure including: first power distribution patterns spaced apart from each other a first boundary and electrically connected to the first power supply line, second power distribution patterns spaced apart from each other along a second boundary and electrically connected to the second power supply line, net metal lines disposed between and spaced apart from the first power distribution patterns and the second power distribution patterns, and electrically connected to a first portion of the signal lines, and pin metal lines electrically connected to a second portion of the signal lines.

公开(公告)号：US20220108989A1

公开(公告)日：2022-04-07

申请号：US17219175

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounggon Kang ,  Taejun Yoo ,  Seunghyun Yang ,  Dalhee Lee

IPC: H01L27/11 ,  H01L23/528 ,  G11C11/417 ,  G11C11/412

Abstract: A semiconductor device is provided. The semiconductor device includes power supply lines extending in a first direction; first transistors, each of which is formed in a first region and has a first threshold voltage; and second transistors, each of which is formed in a second region and has a second threshold voltage higher than the first threshold voltage. One of the plurality of power supply lines is interposed between the first region and the second region, the first transistors implement a first portion of a multiplexer, a clock buffer and a first latch that are disposed on a data path, the second transistors implement a second portion of the multiplexer circuit and a second latch that are disposed on a feedback path, and the first portion of the multiplexer circuit and the second portion of the multiplexer circuit are disposed in a common location along the first direction.

公开(公告)号：US20220092249A1

公开(公告)日：2022-03-24

申请号：US17324829

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeha LEE ,  Jintae Kim ,  Seunghyun Yang ,  Dongyeon Heo

IPC: G06F30/392 ,  G06F30/394 ,  G06F30/398

Abstract: A semiconductor device including a standard cell is provided. The standard cell includes an active region; a gate structure intersecting the active region; a first conductive structure including: a first power supply line and a second power supply line; and a second conductive structure disposed on the first conductive structure, the second conductive structure including: first power distribution patterns spaced apart from each other a first boundary and electrically connected to the first power supply line, second power distribution patterns spaced apart from each other along a second boundary and electrically connected to the second power supply line, net metal lines disposed between and spaced apart from the first power distribution patterns and the second power distribution patterns, and electrically connected to a first portion of the signal lines, and pin metal lines electrically connected to a second portion of the signal lines.