公开(公告)号：US20210125998A1

公开(公告)日：2021-04-29

申请号：US16990305

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOK-HYUN KIM ,  Joon Young KANG ,  YOUNGJUN KIM ,  JINHYUNG PARK ,  HO-JU SONG ,  SANG-JUN LEE ,  HYERAN LEE ,  BONG-SOO KIM ,  SUNGWOO KIM

IPC: H01L27/108

Abstract: A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.

公开(公告)号：US20230120682A1

公开(公告)日：2023-04-20

申请号：US17857441

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEOK-HYUN KIM ,  KANG-UK KIM ,  YOUNGSIN KIM ,  JINA KIM ,  DONGHWA SHIN

IPC: H01L27/108

Abstract: A semiconductor device includes a substrate including an active cell region, a boundary region, and a dummy cell region therebetween, bit lines disposed on the active cell region, extended in a first direction, and spaced apart from each other in a second direction, the bit lines including first and second bit lines alternately arranged in the second direction, bitline pads spaced apart from each other in the second direction on the boundary region, the second bit lines being extended to the dummy cell region and the boundary region in the first direction and being connected to the bitline pads, respectively, and an insulating separation pattern on the boundary region and between the bitline pads. A portion of the insulating separation pattern is extended into a region between the second bit lines on the boundary region and is in contact with an end portion of a corresponding first bit line.

公开(公告)号：US20180138947A1

公开(公告)日：2018-05-17

申请号：US15626252

申请日：2017-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNHO KIM ,  SEOK-HYUN KIM ,  JAEHUN CHOI

IPC: H04B5/00 ,  H04W4/00 ,  H03G3/30

CPC classification number: H04B5/0031 ,  H03G3/3089 ,  H04B5/0062 ,  H04W4/80

Abstract: A near field communication device includes an amplifier that amplifies a signal received through an antenna and outputs the signal as an amplified receive signal, a gain control block that adjusts a gain of the amplifier based on a level of a noise included in the amplified receive signal during a noise reception sequence, and a data determination block that determines a noise threshold voltage based on the level of the noise of the amplified receive signal after the gain is completely adjusted and determines data from the amplified receive signal by using the noise threshold voltage.