公开(公告)号：US20230120682A1

公开(公告)日：2023-04-20

申请号：US17857441

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEOK-HYUN KIM ,  KANG-UK KIM ,  YOUNGSIN KIM ,  JINA KIM ,  DONGHWA SHIN

IPC: H01L27/108

Abstract: A semiconductor device includes a substrate including an active cell region, a boundary region, and a dummy cell region therebetween, bit lines disposed on the active cell region, extended in a first direction, and spaced apart from each other in a second direction, the bit lines including first and second bit lines alternately arranged in the second direction, bitline pads spaced apart from each other in the second direction on the boundary region, the second bit lines being extended to the dummy cell region and the boundary region in the first direction and being connected to the bitline pads, respectively, and an insulating separation pattern on the boundary region and between the bitline pads. A portion of the insulating separation pattern is extended into a region between the second bit lines on the boundary region and is in contact with an end portion of a corresponding first bit line.