公开(公告)号：US20240129453A1

公开(公告)日：2024-04-18

申请号：US18462384

申请日：2023-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGWOO LEE ,  Dongoh KIM ,  MINHYUK LEE ,  SONGSU KIM

IPC: H04N17/00 ,  H04N17/02 ,  H04N23/56

CPC classification number: H04N17/002 ,  H04N17/02 ,  H04N23/56

Abstract: Disclosed is a test system which includes a light source device. The light source device includes a first light source configured to radiate a first light, a plurality of neutral-density (ND) filters including a first ND filter attached to the first light source and configured to adjust the first light, an aperture unit including a plurality of apertures configured to adjust the first light received from the first ND filter and a diffuser configured to diffuse the first light received from the aperture unit and to radiate the first light for testing an image sensor, wherein an illuminance of the first light is adjusted based on a transmittance of the first ND filter and an aperture ratio of each of the apertures.

公开(公告)号：US20170309640A1

公开(公告)日：2017-10-26

申请号：US15644290

申请日：2017-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNWOO LEE ,  SANGWOO LEE ,  CHANGWON LEE ,  JEONGGIL LEE

IPC: H01L27/11582 ,  H01L29/49 ,  H01L27/11578 ,  H01L27/1157 ,  H01L23/535 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/28282 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/1159 ,  H01L29/4958 ,  H01L29/4966

Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

公开(公告)号：US20230412939A1

公开(公告)日：2023-12-21

申请号：US18121804

申请日：2023-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGWOO LEE ,  Eun-ji Yong ,  Dongoh Kim ,  Sungsu Kim

IPC: H04N25/62 ,  H04N25/78

CPC classification number: H04N25/62 ,  H04N25/78

Abstract: An image sensor includes a pixel unit including a plurality of pixels, and configured to generate an analog signal using the plurality of pixels, a data converter configured to receive the analog signal and convert the analog signal into a digital signal, and at least one processor configured to generate image data by performing crosstalk correction and remosaic on the digital signal, output the image data to an external device, receive image data information from the external device, determine a saturation ratio based on the image data information, and adjust settings of the remosaic based on the saturation ratio.

公开(公告)号：US20160240553A1

公开(公告)日：2016-08-18

申请号：US15138873

申请日：2016-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNWOO LEE ,  SANGWOO LEE ,  CHANGWON LEE ,  JEONGGIL LEE

IPC: H01L27/115 ,  H01L23/535 ,  H01L29/49

CPC classification number: H01L27/11582 ,  H01L21/28282 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/1159 ,  H01L29/4958 ,  H01L29/4966

Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.