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公开(公告)号：US11335680B2
公开(公告)日：2022-05-17
申请号：US16912427
申请日：2020-06-25
发明人： Jaeyeol Song , Seungha Oh , Rakhwan Kim , Minjung Park , Dongsoo Lee
IPC分类号： H01L27/088 , H01L29/78 , H01L29/51 , H01L21/8234 , H01L29/66
摘要： An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.
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公开(公告)号：US20210151432A1
公开(公告)日：2021-05-20
申请号：US16912427
申请日：2020-06-25
发明人： Jaeyeol Song , Seungha Oh , Rakhwan Kim , Minjung Park , Dongsoo Lee
IPC分类号： H01L27/088 , H01L29/78 , H01L29/66 , H01L21/8234 , H01L29/51
摘要： An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.
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公开(公告)号：US11177681B2
公开(公告)日：2021-11-16
申请号：US16663733
申请日：2019-10-25
发明人： Kyoungwon Kim , Yusu Kim , Kisun Lee , Minjung Park , Seho Park , Hangseok Choi , Yongsang Yun , Chihyun Cho
摘要： An electronic device according to various embodiments may include: a coil configured to receive a signal for wirelessly obtaining power from an external electronic device; a wireless power circuit (MFC) configured to output the signal received by the coil as a DC signal; a first capacitive voltage divider circuit configured to adjust the voltage of, and to output, power according to a first voltage division ratio; a second capacitive voltage divider circuit configured to adjust the voltage of, and to output, power according to a second voltage division ratio; a controller configured to control the electronic device to provide the DC signal to at least one capacitive voltage divider circuit among the first capacitive voltage divider circuit and the second capacitive voltage divider circuit, based on a voltage value of the signal received through the coil; and a battery configured to receive another signal output from the at least one capacitive voltage divider circuit, based on the provided DC signal, thereby obtaining power.
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公开(公告)号：US11871173B2
公开(公告)日：2024-01-09
申请号：US17492402
申请日：2021-10-01
发明人： Nammin Jo , Seungnyun Kim , Minjung Park , Juyoung Yu , Yongsang Yun
CPC分类号： H04R1/1041 , G06F3/14 , H04R29/001 , H04W76/10 , H04R2420/07
摘要： Various embodiments of the disclosure provide a method and a device, the device including: a communication module; a memory; and a processor operatively coupled to the communication module and the memory, wherein the processor is configured to: monitor a first device latency between a wireless audio output device and the electronic device connected using a first communication scheme through the communication module; predict a second device latency in connection with the wireless audio output device via a wearable display device connected using a second communication scheme through the communication module; and control connection of the wireless audio output device based on the first device latency and the second device latency. Various embodiments are possible.
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公开(公告)号：US20220254779A1
公开(公告)日：2022-08-11
申请号：US17723532
申请日：2022-04-19
发明人： Jaeyeol Song , Seungha Oh , Rakhwan Kim , Minjung Park , Dongsoo Lee
IPC分类号： H01L27/088 , H01L29/78 , H01L29/51 , H01L21/8234 , H01L29/66
摘要： An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.
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公开(公告)号：US11990473B2
公开(公告)日：2024-05-21
申请号：US17723532
申请日：2022-04-19
发明人： Jaeyeol Song , Seungha Oh , Rakhwan Kim , Minjung Park , Dongsoo Lee
IPC分类号： H01L27/088 , H01L21/8234 , H01L29/51 , H01L29/66 , H01L29/78
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823462 , H01L29/517 , H01L29/66795 , H01L29/785
摘要： An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.
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公开(公告)号：US11789526B2
公开(公告)日：2023-10-17
申请号：US17877388
申请日：2022-07-29
发明人： Nammin Jo , Jinchoul Lee , Minjung Park , Juyoung Yu
CPC分类号： G06F3/011 , G02B27/0172 , G06T19/006 , G06F3/012 , G06F3/013
摘要： According to an aspect, an electronic system for outputting video data and audio data includes a terminal device which generates the audio data and the video data; a wearable audio device which communicatively connects to the terminal device through a first wireless communication scheme; and a wearable augmented reality (AR) device which communicatively connects to the terminal device through a second wireless communication scheme. The wearable AR device receives the audio data and the video data from the terminal device, outputs the video data through a display of the wearable AR device, and outputs the audio data through a speaker of the wearable AR device, and the wearable audio device receives the audio data output from the wearable AR device using a microphone of the wearable audio device and outputs the audio data received from the wearable AR device through a speaker of the wearable audio device.
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