公开(公告)号：US20220301633A1

公开(公告)日：2022-09-22

申请号：US17693013

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYEONG-WOO LEE ,  SEUNGYEON KIM ,  DONGHA SHIN ,  BEAKHYUNG CHO

IPC: G11C16/16 ,  G11C16/24 ,  G11C16/28 ,  G11C16/30 ,  G11C7/10

Abstract: A nonvolatile memory device includes a plurality of bit lines that is connected with a plurality of cell strings, a common source line that is connected with the plurality of cell strings, at least one dummy bit line that is provided between the common source line and the plurality of bit lines, a control logic circuit that generates at least one dummy bit line driving signal in response to a command from an external device, and a dummy bit line driver that selectively provides a first voltage to the at least one dummy bit line in response to the dummy bit line driving signal.