公开(公告)号：US20250069660A1

公开(公告)日：2025-02-27

申请号：US18454144

申请日：2023-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tal PHILOSOF ,  Lior KISSOS ,  Ariel DOUBCHAK ,  Amit BERMAN

IPC: G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: Provided are a memory system, a method of reading data and a method of finding read thresholds. The method of finding read thresholds includes: selecting a channel distribution among a plurality of channel distributions that corresponds to a read page of the memory device to be read in response to a read command; generating a Trellis diagram based on a decoding scheme and a type of the read page; determining an optimal path through the Trellis diagram using the selected channel distribution according to a dynamic programming algorithm; and finding the read thresholds from the optimal path.