Invention Application
- Patent Title: SETTING OPTIMAL THRESHOLD VOLTAGES FOR READING DATA FROM A MEMORY DEVICE BASED ON A CHANNEL DISTRIBUTION
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Application No.: US18454144Application Date: 2023-08-23
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Publication No.: US20250069660A1Publication Date: 2025-02-27
- Inventor: Tal PHILOSOF , Lior KISSOS , Ariel DOUBCHAK , Amit BERMAN
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/10 ; G11C16/26 ; G11C29/52

Abstract:
Provided are a memory system, a method of reading data and a method of finding read thresholds. The method of finding read thresholds includes: selecting a channel distribution among a plurality of channel distributions that corresponds to a read page of the memory device to be read in response to a read command; generating a Trellis diagram based on a decoding scheme and a type of the read page; determining an optimal path through the Trellis diagram using the selected channel distribution according to a dynamic programming algorithm; and finding the read thresholds from the optimal path.
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