公开(公告)号：US11686766B2

公开(公告)日：2023-06-27

申请号：US16940809

申请日：2020-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

IPC: G01R31/317 ,  G01R31/28 ,  G01R31/3167 ,  H03K19/017 ,  G01R31/30 ,  G01R31/327 ,  G01R31/319

CPC classification number: G01R31/31724 ,  G01R31/2874 ,  G01R31/3004 ,  G01R31/3167 ,  G01R31/31924 ,  G01R31/3274 ,  H03K19/01721

Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

公开(公告)号：US11650232B2

公开(公告)日：2023-05-16

申请号：US17872363

申请日：2022-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheolhwan Lim ,  Junhee Shin ,  Haejung Choi ,  Kwangho Kim ,  Hyunmyoung Kim

IPC: G01R19/165 ,  H03K17/687 ,  H03K3/037 ,  G06F1/24 ,  G06F1/28

CPC classification number: G01R19/165 ,  G06F1/24 ,  G06F1/28 ,  H03K3/037 ,  H03K17/6872

Abstract: An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

公开(公告)号：US20210199719A1

公开(公告)日：2021-07-01

申请号：US16940809

申请日：2020-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

IPC: G01R31/317 ,  G01R31/28 ,  G01R31/3167 ,  G01R31/319 ,  G01R31/30 ,  G01R31/327 ,  H03K19/017

Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

公开(公告)号：US20250076377A1

公开(公告)日：2025-03-06

申请号：US18954320

申请日：2024-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

IPC: G01R31/317 ,  G01R31/28 ,  G01R31/30 ,  G01R31/3167 ,  G01R31/319 ,  G01R31/327 ,  H03K19/017

Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

公开(公告)号：US20230280398A1

公开(公告)日：2023-09-07

申请号：US18318464

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

IPC: G01R31/317 ,  G01R31/28 ,  G01R31/3167 ,  H03K19/017 ,  G01R31/30 ,  G01R31/327 ,  G01R31/319

CPC classification number: G01R31/31724 ,  G01R31/2874 ,  G01R31/3167 ,  H03K19/01721 ,  G01R31/3004 ,  G01R31/3274 ,  G01R31/31924

Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.