SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

    公开(公告)号:US20240387462A1

    公开(公告)日:2024-11-21

    申请号:US18538327

    申请日:2023-12-13

    Inventor: Junbae KIM

    Abstract: A semiconductor device includes a semiconductor substrate, a peripheral circuit area including an input/output circuit, a electrostatic discharge (ESD) clamp circuit, and control logic, center pads above the peripheral circuit area in a vertical direction, orthogonal to an upper surface of the semiconductor substrate, and electrically connected to the input/output circuit and the center ESD clamp circuit, edge pads adjacent to a first edge of the semiconductor substrate and higher than the plurality of center pads in the vertical direction, and redistribution patterns connected to the plurality of edge pads and extending in a first direction, parallel to the upper surface of the semiconductor substrate. At least one redistribution pattern, among the redistribution patterns, is connected to at least one uppermost wiring pattern at the same height as the center pads by uppermost vias, on both sides of the center pads in the first direction.

    SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20250038134A1

    公开(公告)日:2025-01-30

    申请号:US18771142

    申请日:2024-07-12

    Abstract: A semiconductor package includes: a package substrate including upper pads, lower pads, and a first wiring layer electrically connecting first upper pads of the upper pads to first lower pads of the lower pads, respectively; a semiconductor chip disposed on the package substrate and electrically connected to the first upper pads; an encapsulant covering the semiconductor chip and at least a portion of the package substrate; a first conductive layer covering at least a portion of each of the encapsulant and the package substrate, wherein the first conductive layer is configured to apply a first voltage; a dielectric layer stacked on the first conductive layer; and a second conductive layer stacked on the dielectric layer, wherein the second conductive layer is configured to apply a second voltage.

    INTEGRATED PROTECTING CIRCUIT OF SEMICONDUCTOR DEVICE

    公开(公告)号:US20170125085A1

    公开(公告)日:2017-05-04

    申请号:US15334380

    申请日:2016-10-26

    Abstract: Disclosed is an integrated protecting circuit, which detects ESD and EOS pulses to prevent an over-voltage from being applied to a semiconductor device. The integrated protecting circuit includes a first detector configured to detect an occurrence of an electrical over-stress between a first node to which a first voltage is applied and a second node to which a second voltage is applied, a second detector configured to detect an occurrence of an electrostatic discharge between the first and second nodes, a determination circuit configured to receive separate outputs of the first and second detectors at the same time and to generate a control signal, and a clamping device configured to perform a turn on/off operation in response to the control signal such that a voltage between the first and second nodes is clamped into a constant voltage.

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