公开(公告)号：US20200064276A1

公开(公告)日：2020-02-27

申请号：US16285548

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNG-JUN LEE ,  Ken Ozawa ,  Wook-rae Kim ,  Gwang-Sik Park ,  Ji-hoon Kang ,  Kwang-Soo Kim

IPC: G01N21/95 ,  G06T5/50 ,  G06T7/00 ,  H04N5/372 ,  H01L21/67 ,  H01L21/66

Abstract: Systems and methods related to a structured illumination (SI)-based inspection apparatus are described. The SI-based inspection apparatus may be capable of accurately inspecting an inspection object in real time with high resolution, while reducing the loss of light. Also described are an inspection method, and a semiconductor device fabrication method including the SI-based inspection method. The inspection apparatus may include a light source configured to generate and output a light beam, a phase shifting grating (PSG) configured to convert the light beam from the light source into the SI, a beam splitter configured to cause the SI to be incident on an inspection object and output a reflected beam from the inspection object, a stage capable of moving the inspection object and on which the inspection object is arranged, and a time-delayed integration (TDI) camera configured to capture images of the inspection object by detecting the reflected beam.

公开(公告)号：US10535797B2

公开(公告)日：2020-01-14

申请号：US15879554

申请日：2018-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-seok Kim ,  Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/60 ,  H01L33/62

Abstract: A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.

公开(公告)号：US10955360B2

公开(公告)日：2021-03-23

申请号：US16285548

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-jun Lee ,  Ken Ozawa ,  Wook-rae Kim ,  Gwang-sik Park ,  Ji-hoon Kang ,  Kwang-soo Kim

IPC: G06T7/00 ,  G01N21/95 ,  G06T5/50 ,  H04N5/372 ,  H01L21/66 ,  H01L21/67

Abstract: Systems and methods related to a structured illumination (SI)-based inspection apparatus are described. The SI-based inspection apparatus may be capable of accurately inspecting an inspection object in real time with high resolution, while reducing the loss of light. Also described are an inspection method, and a semiconductor device fabrication method including the SI-based inspection method. The inspection apparatus may include a light source configured to generate and output a light beam, a phase shifting grating (PSG) configured to convert the light beam from the light source into the SI, a beam splitter configured to cause the SI to be incident on an inspection object and output a reflected beam from the inspection object, a stage capable of moving the inspection object and on which the inspection object is arranged, and a time-delayed integration (TDI) camera configured to capture images of the inspection object by detecting the reflected beam.

公开(公告)号：US20190074406A1

公开(公告)日：2019-03-07

申请号：US15879554

申请日：2018-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-seok Kim ,  Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L33/08 ,  H01L33/46 ,  H01L33/38 ,  H01L33/20

Abstract: A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.

公开(公告)号：US09597052B2

公开(公告)日：2017-03-21

申请号：US14314775

申请日：2014-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-min Lee ,  Sung-kyu Park ,  Min-kook Cho ,  Ji-hoon Kang ,  Jin-hwan Oh ,  Jerome Crocco

IPC: A61B6/00

CPC classification number: A61B6/563 ,  A61B6/4233 ,  A61B6/488 ,  A61B6/544 ,  A61B6/566

Abstract: A method for storing X-ray data includes acquiring the X-ray data by using an X-ray detection module; and transmitting all or some of the acquired X-ray data to other X-ray detection module which is different from the X-ray detection module that has acquired the X-ray data.

公开(公告)号：US10229896B2

公开(公告)日：2019-03-12

申请号：US15871267

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01L25/00

Abstract: A method for manufacturing a light emitting diode (LED) apparatus is provided. The method includes forming a plurality of color filters on a glass layer, forming a plurality of light leakage preventing films on the glass layer in a space between the plurality of color filters; forming a plurality of conductive materials on a surface of each of the plurality of light leakage preventing films opposite to the glass layer; and bonding a plurality of light emitting diodes with the plurality of conductive materials to correspond to the plurality of color filters, respectively.

公开(公告)号：US09429664B2

公开(公告)日：2016-08-30

申请号：US14462928

申请日：2014-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jerome Crocco ,  Ji-hoon Kang ,  Sung-kyu Park ,  Jin-hwan Oh ,  Sang-min Lee ,  Min-kook Cho

IPC: G01T1/24 ,  H01L27/146 ,  H01L31/08 ,  G01N23/04 ,  G01T7/00

CPC classification number: G01T1/24 ,  G01N23/04 ,  G01T7/00 ,  H01L27/14676 ,  H01L27/14696 ,  H01L31/085

Abstract: An X-ray detector and an X-ray imaging apparatus including the X-ray detector are provided. The X-ray detector includes a detector element including a cathode electrode and an anode electrode which are spaced apart from each other and a photoconductive layer located between the cathode electrode and the anode electrode and configured to absorb X-rays and generate electric charges, a first temperature controller configured to contact a first surface of the detector element and is configured to control a temperature of the cathode electrode, and a second temperature controller configured to contact a second surface of the detector element opposite to the first surface of the detector element and configured to control a temperature of the anode electrode.

Abstract translation: 提供了包括X射线检测器的X射线检测器和X射线摄像装置。 X射线检测器包括：检测器元件，其包括彼此间隔开的阴极电极和阳极电极，以及位于阴极电极和阳极电极之间并被构造成吸收X射线并产生电荷的光电导层， 第一温度控制器被配置为接触检测器元件的第一表面并且被配置为控制阴极电极的温度;以及第二温度控制器，被配置为接触与检测器元件的第一表面相对的检测器元件的第二表面，以及 被配置为控制阳极电极的温度。