公开(公告)号：US20190074406A1

公开(公告)日：2019-03-07

申请号：US15879554

申请日：2018-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-seok Kim ,  Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L33/08 ,  H01L33/46 ,  H01L33/38 ,  H01L33/20

Abstract: A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.

公开(公告)号：US10535797B2

公开(公告)日：2020-01-14

申请号：US15879554

申请日：2018-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-seok Kim ,  Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/60 ,  H01L33/62

Abstract: A method of manufacturing a light emitting diode is provided. The method includes forming a semiconductor layer on a substrate, forming a mask layer including a plurality of grooves on the semiconductor layer, forming a plurality of nanostructures in the plurality of grooves, respectively, forming an etched region by etching an outer region of the semiconductor layer and an inner region of the semiconductor layer different from the outer region, forming a first electrode on the etched region of the semiconductor layer, forming an insulation layer on the first electrode, and forming a second electrode on the insulation layer and the plurality of nanostructures.

公开(公告)号：US11424392B2

公开(公告)日：2022-08-23

申请号：US17063753

申请日：2020-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/10 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US20210020811A1

公开(公告)日：2021-01-21

申请号：US17063753

申请日：2020-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US10818826B2

公开(公告)日：2020-10-27

申请号：US15904876

申请日：2018-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US10229896B2

公开(公告)日：2019-03-12

申请号：US15871267

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-hoon Kang

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01L25/00

Abstract: A method for manufacturing a light emitting diode (LED) apparatus is provided. The method includes forming a plurality of color filters on a glass layer, forming a plurality of light leakage preventing films on the glass layer in a space between the plurality of color filters; forming a plurality of conductive materials on a surface of each of the plurality of light leakage preventing films opposite to the glass layer; and bonding a plurality of light emitting diodes with the plurality of conductive materials to correspond to the plurality of color filters, respectively.