公开(公告)号：US20210020544A1

公开(公告)日：2021-01-21

申请号：US16795686

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungjoo PARK ,  Jaewon HWANG ,  Kwangjin MOON ,  Kunsang PARK

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a substrate, a first through substrate via configured to penetrate at least partially through the substrate, the first through substrate via having a first aspect ratio, and a second through substrate via configured to penetrate at least partially through the substrate. The second through substrate via has a second aspect ratio greater than the first aspect ratio, and each of the first through substrate via and the second through substrate via includes a first conductive layer and a second conductive layer. A thickness in a vertical direction of the first conductive layer of the first through substrate via is less than a thickness in the vertical direction of the first conductive layer of the second through substrate via.

公开(公告)号：US20240047305A1

公开(公告)日：2024-02-08

申请号：US18199541

申请日：2023-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungha OH ,  Jaewon HWANG ,  Kwangjin MOON ,  Hojin LEE ,  Hyungjun JEON

IPC: H01L23/48 ,  H01L23/528 ,  H01L27/088 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L23/5286 ,  H01L27/0886 ,  H01L27/088 ,  H01L21/76898 ,  H01L24/13 ,  H01L2224/13007 ,  H01L2224/1411 ,  H01L24/14

Abstract: An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface; a power via penetrating between the first surface and the second surface of the substrate; a cell part including a plurality of individual elements having different thicknesses inside the substrate, and a recess positioned between the individual elements; a signal wiring part on the first surface of the substrate and including an upper multilayer wiring layer connected to the power via; a power transmission network part under the second surface of the substrate and including a lower multilayer wiring layer connected to the power via; and an external connection terminal under the power transmission network part and connected to the lower multilayer wiring layer, wherein the substrate includes a plurality of regions having different thicknesses.