公开(公告)号：US20230005853A1

公开(公告)日：2023-01-05

申请号：US17674974

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kunsang PARK ,  Kyuha LEE ,  Youngmin LEE ,  Seokho KIM ,  Inyoung LEE ,  Seokhwan JEONG ,  Sungdong CHO

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/66

Abstract: A semiconductor package includes a first structure having a first insulating layer and a first bonding pad penetrating the first insulating layer, and a second structure on the first structure and having a second insulating layer bonded to the first insulating layer, a bonding pad structure penetrating the second insulating layer and bonded to the first bonding pad, and a test pad structure penetrating the second insulating layer and including a test pad in an opening penetrating the second insulating layer and having a protrusion with a flat surface, and a bonding layer filling the opening and covering the test pad and the flat surface, the protrusion of the test pad extending from a surface in contact with the bonding layer, and the flat surface of the protrusion being within the opening and spaced apart from an interface between the bonding layer and the first insulating layer.

公开(公告)号：US20240312935A1

公开(公告)日：2024-09-19

申请号：US18467199

申请日：2023-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Hee JANG ,  Kwangjin MOON ,  Seokho KIM ,  Soonwook KIM ,  Kunsang PARK

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/08 ,  H01L24/80 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A bonding semiconductor device according to at least one embodiment is formed by bonding a first chip and a second chip, and includes a chip region and a partition region. A bonding pad formed by bonding a first bonding pad of the first chip and a second bonding pad of the second chip may be provided in the chip region. A separation pattern portion in which a first base layer of a first pattern portion of the first chip and a second base layer of a second pattern portion of the second chip are entirely separated from each other to have an inner space may be provided in the partition region.

公开(公告)号：US20210020544A1

公开(公告)日：2021-01-21

申请号：US16795686

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungjoo PARK ,  Jaewon HWANG ,  Kwangjin MOON ,  Kunsang PARK

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a substrate, a first through substrate via configured to penetrate at least partially through the substrate, the first through substrate via having a first aspect ratio, and a second through substrate via configured to penetrate at least partially through the substrate. The second through substrate via has a second aspect ratio greater than the first aspect ratio, and each of the first through substrate via and the second through substrate via includes a first conductive layer and a second conductive layer. A thickness in a vertical direction of the first conductive layer of the first through substrate via is less than a thickness in the vertical direction of the first conductive layer of the second through substrate via.