公开(公告)号：US20140136767A1

公开(公告)日：2014-05-15

申请号：US14079661

申请日：2013-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOON-HO LEE ,  HYUN-SEOK KIM

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F9/4411 ,  G06F12/10 ,  G06F12/1009 ,  G06F2212/7201 ,  G06F2212/7209

Abstract: In a memory system including a flash memory and a memory controller having a cache memory and a nonvolatile random access memory (NVRAM), a method of operating the memory system includes; receiving a write request specifying a write operation directed to a page of a designated active write block in the flash memory, storing a page mapping table for the active write block in the cache memory, generating update information for the page mapping table stored in the cache memory as a result of executing the write operation, and storing the update information in the NVRAM, and storing an updated version of the page mapping table in the flash memory after execution of the write operation is complete.

Abstract translation: 在包括闪速存储器和具有高速缓冲存储器和非易失性随机存取存储器（NVRAM）的存储器控​​制器的存储器系统中，操作存储器系统的方法包括： 接收写入请求，指定指向闪速存储器中指定的活动写入块的页面的写入操作，将用于所述活动写入块的页面映射表存储在所述高速缓冲存储器中，生成存储在所述高速缓存器中的所述页面映射表的更新信息 作为执行写入操作的结果的存储器，并且将更新信息存储在NVRAM中，并且在执行写入操作之后将页面映射表的更新版本存储在闪存中。

公开(公告)号：US20170337979A1

公开(公告)日：2017-11-23

申请号：US15351576

申请日：2016-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOON-HO LEE ,  SIL-WAN CHANG ,  HYUN-JIN CHOI ,  DONG-HOON HAM

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/26 ,  G11C5/144 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/3418

Abstract: An operating method of a memory controller, configured to control a non-volatile memory device that performs a refresh read operation, detects a power on state or power off state of the non-volatile memory device and issues a refresh read command. The non-volatile memory device that receives the refresh read command is controlled to perform, one time, the refresh read operation including a read operation on one of a plurality of word lines with respect to each of the plurality of memory blocks.

公开(公告)号：US20150205540A1

公开(公告)日：2015-07-23

申请号：US14447654

申请日：2014-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： SANG-WOOK YOO ,  PILCHANG SON ,  JOON-HO LEE

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0688 ,  Y02D10/154

Abstract: A memory system includes nonvolatile memory devices (NVM) connected to a controller via a channel and provided with data according to an interleaving approach. A controller respectively accesses the NVM and determines a number of program operations that may be simultaneously executed by the NVM in conjunction with an additional operation upon comparing a peak operating current associated with a sum of respective peak operating currents for the number of program operations and the at least one additional operation with a reference peak current.

Abstract translation: 存储器系统包括经由信道连接到控制器并且根据交织方法提供数据的非易失性存储器件（NVM）。 控制器分别访问NVM并且确定可以与NVM同时执行的程序操作的数量，并结合附加操作，比较与用于程序操作次数的各个峰值操作电流之和相关联的峰值操作电流，以及 至少一个具有参考峰值电流的附加操作。

公开(公告)号：US20200043884A1

公开(公告)日：2020-02-06

申请号：US16268651

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOON-HO LEE ,  Sung-Hyup Kim ,  Ki-Ju Sohn

IPC: H01L23/00 ,  H01L21/67 ,  H01J37/32 ,  H01L25/00 ,  H01L25/18 ,  H01L27/146 ,  H01L21/68 ,  H01L23/544

Abstract: A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.

公开(公告)号：US20140003142A1

公开(公告)日：2014-01-02

申请号：US13786501

申请日：2013-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOON-HO LEE ,  GWANG-OK GO ,  KYUNG-HO SHIN ,  MI-HYANG LEE

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C11/5621 ,  G11C2207/2236 ,  G11C2211/5641

Abstract: A nonvolatile memory device comprises a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.

Abstract translation: 非易失性存储器件包括单层单元（SLC）的第一区域和多层单元（MLC）的第二区域。 设备通过在第一区域的存储块之间复制数据来确定是否可以创建空闲块。 在确定可以通过在第一区域的存储块之间复制数据来创建空闲存储器块时，设备在第一区域的存储器块之间复制数据以创建空闲存储器块。 否则，设备从第一区域中选择至少一个存储块，并通过将存储在所选择的第一区域的存储块中的数据复制到第二区域来将所选择的存储器块分配为空闲存储块。