公开(公告)号：US10811381B2

公开(公告)日：2020-10-20

申请号：US16268651

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Ho Lee ,  Sung-Hyup Kim ,  Ki-Ju Sohn

IPC: H01L21/68 ,  H01L23/00 ,  H01L21/67 ,  H01J37/32 ,  H01L25/00 ,  H01L25/18 ,  H01L27/146 ,  H01L23/544 ,  H01L29/04 ,  H01L21/683

Abstract: A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.

公开(公告)号：US20200043884A1

公开(公告)日：2020-02-06

申请号：US16268651

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOON-HO LEE ,  Sung-Hyup Kim ,  Ki-Ju Sohn

IPC: H01L23/00 ,  H01L21/67 ,  H01J37/32 ,  H01L25/00 ,  H01L25/18 ,  H01L27/146 ,  H01L21/68 ,  H01L23/544

Abstract: A wafer to wafer bonding method includes performing a plasma process on a bonding surface of a first wafer, pressurizing the first wafer after performing the plasma process on the bonding surface of the first wafer, and bonding the first wafer to a second wafer. The plasma process has different plasma densities along a circumferential direction about a center of the first wafer. A middle portion of the first wafer protrudes after pressurizing the first wafer. The first wafer is bonded to the second wafer by gradually joining the first wafer to the second wafer from the middle portion of the first wafer to a peripheral region of the first wafer.