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公开(公告)号:US20230047345A1
公开(公告)日:2023-02-16
申请号:US17680617
申请日:2022-02-25
Applicant: SAMSUNG ELECTRONICS CO.,LTD.
Inventor: Inhyo HWANG , Young Lyong Kim
IPC: H01L25/065 , H01L23/498
Abstract: Provided is a semiconductor package including a first semiconductor chip provided on a package substrate, an interconnection substrate provided on the package substrate, the interconnection substrate having a side surface facing the first semiconductor chip, and a second semiconductor chip provided on the interconnection substrate and extended to a region on a top surface of the first semiconductor chip, wherein the interconnection substrate includes a lower interconnection layer facing the package substrate, an upper interconnection layer facing the first semiconductor chip, and a passive device between the lower interconnection layer and the upper interconnection layer, and wherein the passive device is electrically connected to the second semiconductor chip.
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公开(公告)号:US20240079340A1
公开(公告)日:2024-03-07
申请号:US18459520
申请日:2023-09-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Inhyo HWANG
IPC: H01L23/538 , H01L23/00 , H01L23/498 , H01L25/065 , H10B80/00
CPC classification number: H01L23/5386 , H01L23/49811 , H01L24/16 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/73 , H01L25/0652 , H10B80/00 , H01L2224/16146 , H01L2224/16227 , H01L2224/2919 , H01L2224/30505 , H01L2224/32146 , H01L2224/32225 , H01L2224/33051 , H01L2224/73204 , H01L2224/73253 , H01L2225/065 , H01L2924/1436 , H01L2924/2064 , H01L2924/2065
Abstract: A semiconductor package includes: a base substrate; an interposer disposed on the base substrate, wherein the interposer includes a plurality of recesses in a bottom surface thereof; a semiconductor chip disposed on the interposer; a plurality of interposer connection terminals between the interposer and the base substrate, wherein the plurality of interposer connection terminals electrically connect the interposer to the base substrate; and a first underfill layer disposed between the interposer and the base substrate, wherein the first underfill layer at least partially surrounds the plurality of interposer connection terminals, wherein the first underfill layer at least partially surrounds a side surface of each of the plurality of recesses and has a slope declining from the bottom surface of the interposer to a top surface of the base substrate.
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公开(公告)号:US20240063167A1
公开(公告)日:2024-02-22
申请号:US18217649
申请日:2023-07-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Inhyo HWANG
IPC: H01L23/00 , H01L25/10 , H01L25/065 , H01L23/31
CPC classification number: H01L24/32 , H01L25/105 , H01L25/0657 , H01L23/3135 , H01L24/08 , H01L24/16 , H01L24/73 , H01L24/83 , H01L24/96 , H01L24/97 , H01L2225/06513 , H01L2225/06541 , H01L2224/16148 , H01L2224/08148 , H01L2224/16225 , H01L2224/32145 , H01L2224/73204 , H01L2224/83203 , H01L2224/96 , H01L2224/97 , H01L2924/1431
Abstract: A semiconductor package includes: a buffer die; a first core die disposed on the buffer die; a second core die disposed on the first core die; a first non-conductive film (NCF) disposed between the first core die and the second core die and bonding the first core die and the second core die to each other; a first molding layer at least partially surrounding a side surface of the first core die; and a second molding layer surrounding the first NCF and the first molding layer, wherein the first core die, the second core die, and the buffer die are disposed on the second molding layer, wherein a side surface of the first molding layer and a side surface of the first NCF form a coplanar surface.
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公开(公告)号:US20240040805A1
公开(公告)日:2024-02-01
申请号:US18122285
申请日:2023-03-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: HYUNSOO CHUNG , YOUNG LYONG KIM , Inhyo HWANG
CPC classification number: H10B80/00 , H01L25/50 , H01L23/3128 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204
Abstract: A semiconductor package may include a substrate, a chip structure mounted on the substrate, and a first dummy structure attached to the chip structure. The chip structure may include a first semiconductor chip, a second dummy structure disposed at a side of the first semiconductor chip, and a mold layer enclosing the first semiconductor chip and the second dummy structure. A bottom surface of the first semiconductor chip, a bottom surface of the second dummy structure, and a bottom surface of the mold layer may be coplanar with each other.
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公开(公告)号:US20240395719A1
公开(公告)日:2024-11-28
申请号:US18390834
申请日:2023-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Joonghyun BAEK , Inhyo HWANG
IPC: H01L23/538 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
Abstract: Provided is a semiconductor package including a redistribution substrate, a bridge chip on the redistribution substrate, a first conductive post and a second conductive post on the redistribution substrate and spaced apart from the bridge chip, a first semiconductor chip on the bridge chip and the first conductive post, a second semiconductor chip on the bridge chip and the second conductive post, and a first mold layer on the redistribution substrate, the bridge chip, the first semiconductor chip, and the second semiconductor chip, wherein the bridge chip includes a bridge die connected to an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, a second mold layer on the bridge die, a penetration via adjacent to the bridge die and vertically penetrating the second mold layer, and a capacitor disposed a bottom surface of the second mold layer and connected to the penetration via.
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公开(公告)号:US20220208743A1
公开(公告)日:2022-06-30
申请号:US17696157
申请日:2022-03-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ae-Nee JANG , Inhyo HWANG
IPC: H01L25/10 , H01L23/31 , H01L23/538 , H01L21/683 , H01L21/48 , H01L21/56 , H01L21/78 , H01L23/00 , H01L25/00
Abstract: A semiconductor device includes a first package, and a second package stacked on the first package. Each of the first and second packages includes a first redistribution substrate having a first redistribution pattern, a first semiconductor chip on the first redistribution substrate and connected to the first redistribution pattern, a first molding layer covering the first semiconductor chip on the first redistribution substrate, a first through-electrode penetrating the first molding layer so as to be connected to the first redistribution pattern, and a second through-electrode penetrating the first molding layer and not connected to the first redistribution pattern. The first redistribution pattern of the second package is electrically connected to the second through-electrode of the first package.
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公开(公告)号:US20240222230A1
公开(公告)日:2024-07-04
申请号:US18353313
申请日:2023-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Dae-Woo KIM , Young Lyong KIM , Inhyo HWANG
IPC: H01L23/48 , H01L21/48 , H01L23/29 , H01L23/538
CPC classification number: H01L23/481 , H01L21/486 , H01L23/293 , H01L23/5384
Abstract: A semiconductor package according to at least one embodiment may include: a first chiplet and a second chiplet disposed side by side with each other, wherein each of the first chiplet and the second comprises a substrate including an active side and a back side opposite to the active side; a back side power distribution network (BSPDN) in the back side of the substrate; and a third chiplet electrically coupling the first chiplet and the second chiplet to each other above the first chiplet and the second chiplet; and a fourth chiplet and a fifth chiplet disposed side by side with the third chiplet.
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公开(公告)号:US20230069511A1
公开(公告)日:2023-03-02
申请号:US17834066
申请日:2022-06-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Inhyo HWANG
IPC: H01L25/10 , H01L23/00 , H01L23/498
Abstract: A semiconductor package including a package redistribution layer, a cover insulating layer on the package redistribution layer; a lower semiconductor chip arranged between the package redistribution layer and the cover insulating layer and electrically connected to the package redistribution layer, a lower molding layer surrounding the lower semiconductor chip and filling between the package redistribution layer and the cover insulating layer, a plurality of connection posts electrically connected to the package redistribution layer by passing through the cover insulating layer and the lower molding layer, an upper semiconductor chip arranged above the cover insulating layer electrically connected to the plurality of connection posts, and an upper molding layer filling between the upper semiconductor chip and the cover insulating layer and surrounding the upper semiconductor chip may be provided.
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公开(公告)号:US20210233897A1
公开(公告)日:2021-07-29
申请号:US17018324
申请日:2020-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ae-Nee JANG , Inhyo HWANG
IPC: H01L25/10 , H01L23/00 , H01L23/31 , H01L23/538 , H01L21/683 , H01L21/48 , H01L21/56 , H01L21/78 , H01L25/00
Abstract: A semiconductor device includes a first package, and a second package stacked on the first package. Each of the first and second packages includes a first redistribution substrate having a first redistribution pattern, a first semiconductor chip on the first redistribution substrate and connected to the first redistribution pattern, a first molding layer covering the first semiconductor chip on the first redistribution substrate, a first through-electrode penetrating the first molding layer so as to be connected to the first redistribution pattern, and a second through-electrode penetrating the first molding layer and not connected to the first redistribution pattern. The first redistribution pattern of the second package is electrically connected to the second through-electrode of the first package.
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