公开(公告)号：US10347527B2

公开(公告)日：2019-07-09

申请号：US15975003

申请日：2018-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangho Rha ,  Kyoung Hee Nam ,  Jeonggil Lee ,  Hyunseok Lim ,  Seungjong Park ,  Seulgi Bae ,  Jaejin Lee ,  Kwangtae Hwang

IPC: H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

公开(公告)号：US20200039827A1

公开(公告)日：2020-02-06

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US09997400B2

公开(公告)日：2018-06-12

申请号：US15332297

申请日：2016-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangho Rha ,  Kyoung Hee Nam ,  Jeonggil Lee ,  Hyunseok Lim ,  Seungjong Park ,  Seulgi Bae ,  Jaejin Lee ,  Kwangtae Hwang

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76882 ,  H01L23/53238

Abstract: A semiconductor device includes a substrate, a first metal interconnection provided on a first region of the substrate, and a second metal interconnection provided on a second region of the substrate. A width of the second metal interconnection is greater than a width of the first metal interconnection. The first metal interconnection includes a metal pattern. The second metal interconnection includes a lower metal pattern having a concave surface at its top, an upper metal pattern disposed on the concave surface at the top of the lower metal pattern, and a first barrier pattern interposed between the lower metal pattern and the upper metal pattern. The metal interconnections are formed by a damascene process including deposition, reflow, metal implantation, and planarization processes.

公开(公告)号：US12217958B2

公开(公告)日：2025-02-04

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Janghee Lee ,  Seunggeol Nam ,  Hyeonjin Shin ,  Hyunseok Lim ,  Alum Jung ,  Kyung-Eun Byun ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/02 ,  C23C16/26 ,  H01L21/02

Abstract: A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.

公开(公告)号：US11538810B2

公开(公告)日：2022-12-27

申请号：US17225601

申请日：2021-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseok Lim ,  Minhyuk Cho ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Kaoru Yamamoto ,  Jungsoo Yoon ,  Soyoung Lee ,  Geuno Jeong

IPC: H01L27/108

Abstract: A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

公开(公告)号：US10850985B2

公开(公告)日：2020-12-01

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: H01L29/12 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.