公开(公告)号：US20130301338A1

公开(公告)日：2013-11-14

申请号：US13718206

申请日：2012-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-bae KIM ,  Hyun-sang HWANG ,  Chang-jung KIM

IPC: G11C11/21 ,  H01L45/00

CPC classification number: G11C11/21 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

Abstract: Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state.

Abstract translation: 混合电阻式存储器件及其操作和制造方法包括至少两个电阻存储器单元。 所述至少两个电阻式存储器单元中的至少一个是被配置为在长期可塑性状态下操作的电阻存储器单元。

公开(公告)号：US20160155500A1

公开(公告)日：2016-06-02

申请号：US14830377

申请日：2015-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Man CHANG ,  In-gyu BAEK ,  Sang-heon LEE ,  Hyun-sang HWANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0064 ,  G11C2013/0092

Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

Abstract translation: 控制电阻式存储器件的方法包括：访问满足存储单元阵列中包含的多个存储器单元中的至少第一个存储单元系数的第一脉冲功率规范; 根据所访问的第一脉冲功率规格产生第一脉冲功率; 以及使用所生成的第一脉冲功率对所述多个存储单元中的至少所述第一存储单元执行写入操作。

公开(公告)号：US20130300509A1

公开(公告)日：2013-11-14

申请号：US13746090

申请日：2013-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-bae KIM ,  Chang-jung KIM ,  Sang-su PARK ,  Hyun-sang HWANG

IPC: H03L7/00

CPC classification number: H03L7/00 ,  H03K3/0315

Abstract: A frequency tuning apparatus may include an oscillator and a memory element connected to the oscillator. The memory element may have a variable resistance. An oscillation frequency of the oscillator may vary according to a resistance state of the memory element. The oscillator may be a ring oscillator. The memory element may be connected to an input terminal or a power terminal of the oscillator.

Abstract translation: 频率调谐装置可以包括振荡器和连接到振荡器的存储元件。 存储元件可以具有可变电阻。 振荡器的振荡频率可以根据存储元件的电阻状态而变化。 振荡器可以是环形振荡器。 存储元件可以连接到振荡器的输入端子或电源端子。