公开(公告)号：US20250123573A1

公开(公告)日：2025-04-17

申请号：US18757567

申请日：2024-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Yong BAE ,  Hyeon Jin KIM ,  Jeong-Gil KIM ,  Kyoung Hwan OH ,  Dong Jin LEE

IPC: G03F7/00

Abstract: A lithography apparatus comprises a wafer stage, a cable configured to be bent as the wafer stage moves, a first support configured to prevent the cable from sagging, and to support the cable to maintain a bent state of the cable when the cable moves, a first rail installed on a first side of the cable, and including curved track extending in a direction from a lower portion of the cable toward an upper portion of the cable, wherein the first rail includes a concave first surface, a second rail installed on a second side of the cable opposite the first side of the cable, and including curved track extending in the direction from the lower portion of the cable toward the upper portion of the cable, wherein the second rail includes a concave second surface.

公开(公告)号：US20180261677A1

公开(公告)日：2018-09-13

申请号：US15653588

申请日：2017-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung Hoon LEE ,  Hyeon Jin KIM ,  Hoon Joo NA ,  Sung In SUH ,  Chan Hyeong LEE ,  Hu Yong LEE ,  Seong Hoon JEONG ,  Sang Jin HYUN

IPC: H01L29/49 ,  H01L29/78 ,  H01L27/092 ,  H01L21/28

Abstract: A semiconductor device includes a gate insulating layer disposed on a substrate, a first work function tuning layer disposed on the gate insulating layer, a lower barrier conductive layer on and in contact with the first work function tuning layer, and an upper barrier conductive layer on and in contact with the lower barrier conductive layer. The upper barrier conductive layer and the lower barrier conductive layer include a material in common, e.g., they may each include a titanium nitride (TiN) layer.

公开(公告)号：US20230046424A1

公开(公告)日：2023-02-16

申请号：US17691471

申请日：2022-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Jin KIM ,  Sung Hyup KIM ,  Jeong-Gil KIM ,  Jeong Du KIM ,  Sang Hoon LEE ,  In Jae LEE ,  Jong Gu LEE

IPC: H05G2/00 ,  G03F7/20 ,  H01L21/3065 ,  H01L21/027

Abstract: An extreme ultraviolet light generator includes a collector including a first focus and a second focus, a droplet feeder configured to provide a source droplet toward the first focus of the collector, a laser generator configured to irradiate a laser toward the first focus of the collector, an airflow controller between the first focus and the second focus of the collector, the airflow controller having a ring shape, and the airflow controller including at least one slit, and a first part and a second part hinged to each other, and a control gas feeder configured to provide a control gas towards the at least one slit of the airflow controller.